參數(shù)資料
型號： NDT3055
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Enhancement Mode Field Effect Transistor（4A，60V，0.1Ω）(N溝道增強型場效應(yīng)管（漏電流4A, 漏源電壓60V，導(dǎo)通電阻0.1Ω）)
中文描述： 4 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 2/8頁
文件大?。?/td> 226K
代理商： NDT3055
Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA, Referenced to 25
o
C
60
V
Breakdown Voltage Temp. Coefficient
63
mV/
o
C
Zero Gate Voltage Drain Current
V
DS
= 48 V, V
GS
= 0 V
10
μA
T
J
=125°C
100
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
2
3
4
V
T
J
=125°C
1.5
2.4
3
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 4 A
0.084
0.1
T
J
=125°C
0.14
0.18
I
D(ON)
g
FS
DYNAMIC CHARACTERISTICS
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
V
DS
= 15 V, I
D
= 4 A
15
A
Forward Transconductance
6
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= 30 V, V
GS
= 0 V,
f = 1.0 MHz
250
pF
Output Capacitance
100
pF
Reverse Transfer Capacitance
30
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Turn - On Delay Time
V
DD
= 25 V, I
D
= 1.2 A,
V
GS
= 10 V, R
GEN
= 50
10
25
ns
Turn - On Rise Time
18
50
ns
Turn - Off Delay Time
37
65
ns
Turn - Off Fall Time
30
60
ns
Total Gate Charge
V
DS
= 40 V, I
D
= 4 A,
V
GS
= 10 V
9
15
nC
Gate-Source Charge
2.3
nC
Gate-Drain Charge
2.6
nC
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
2.5
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 2.5 A
(Note 2)
0.85
1.2
V
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is
guaranteed by design while R
θ
CA
is determined by the user's board design.
Typical R
θ
JA
using the board layouts shown below on FR-4 PCB in a still air environment:
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%
NDT3055 Rev.B
a. 42
2oz Cu.
o
C/W when mounted on a 1 in
2
pad of
b. 95
pad of 2oz Cu.
o
C/W when mounted on a 0.066 in
2
c. 110
o
C/W when mounted on a 0.00123
in
2
pad of 2oz Cu.
相關(guān)PDF資料
PDF描述
NDT410EL N-Channel Logic Level Enhancement Mode Field Effect Transistor（2.1A，100V，0.25Ω）(N溝道邏輯增強型場效應(yīng)管（漏電流2.1A, 漏源電壓100V，導(dǎo)通電阻0.25Ω）)
NDT410EL(J23Z) TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 2.1A I(D) | SOT-223
NDT451AN N-Channel Enhancement Mode Field Effect Transistor（7.2A，30V，0.035Ω）(N溝道增強型場效應(yīng)管（漏電流7.2A, 漏源電壓30V，導(dǎo)通電阻0.035Ω）)
NDT451N N-Channel Enhancement Mode Field Effect Transistor（5.5A，30V，0.05Ω）(N溝道增強型場效應(yīng)管（漏電流5.5A, 漏源電壓30V，導(dǎo)通電阻0.05Ω）)
NDT451 N-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDT3055(J23Z) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 4A I(D) | SOT-223
NDT3055_J23Z 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDT3055-CUT TAPE 制造商:FAIRCHILD 功能描述:NDT Series N-Channel 60 V 0.1 O Enhancement Mode Field Effect Transistor SOT-223
NDT3055L 功能描述:MOSFET SOT-223 N-CH LOGIC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDT3055L(J23Z) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 3.7A I(D) | SOT-223
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*