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參數資料
| 型號： | NDT455N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor（11.5A，30V，0.015Ω）(N溝道增強型場效應管（漏電流11.5A, 漏源電壓30V，導通電阻0.015Ω）) |
| 中文描述： | 11.5 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數： | 2/10頁 |
| 文件大小： | 228K |
| 代理商： | NDT455N |
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
DS
= 24 V, V
GS
= 0 V
30
V
Zero Gate Voltage Drain Current
1
μA
T
J
= 55°C
10
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
1
1.5
3
V
T
J
= 125°C
0.7
0.9
2.2
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 11.5 A
0.013
0.015
T
J
= 125°C
0.019
0.03
V
GS
= 4.5 V, I
D
= 10 A
V
GS
= 10 V , V
DS
= 5 V
V
GS
= 4.5 V, V
DS
= 5 V
V
GS
= 10 V, I
D
= 11.5 A
0.018
0.02
I
D(on)
On-State Drain Current
30
A
15
g
FS
DYNAMIC CHARACTERISTICS
Forward Transconductance
26
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= 15, V
GS
= 0 V,
f = 1.0 MHz
1220
pF
Output Capacitance
715
pF
Reverse Transfer Capacitance
280
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Turn - On Delay Time
V
DD
= 15 V, I
D
= 1 A,
V
GEN
= 10 V, R
GEN
= 6
11
20
ns
Turn - On Rise Time
16
30
ns
Turn - Off Delay Time
48
80
ns
Turn - Off Fall Time
40
70
ns
Total Gate Charge
V
= 10 V,
I
D
= 11.5 A, V
GS
= 10 V
43
61
nC
Gate-Source Charge
4
nC
Gate-Drain Charge
11
nC
NDT455N Rev.F
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相關代理商/技術參數 |
參數描述 |
|---|---|
| NDT455N(J23Z) | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 11.5A I(D) | SOT-223 |
| NDT456 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| NDT456P | 功能描述:MOSFET SOT-223 P-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDT456P(J23Z) | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 7.5A I(D) | SOT-223 |
| NDT456P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P LOGIC SOT-223 |
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