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參數(shù)資料
| 型號(hào)： | NDT455N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor（11.5A，30V，0.015Ω）(N溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流11.5A, 漏源電壓30V，導(dǎo)通電阻0.015Ω）) |
| 中文描述： | 11.5 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 228K |
| 代理商： | NDT455N |
NDT455N Rev.F
Typical Thermal Characteristics
0
6
12
18
24
30
0
10
20
30
40
I , DRAIN CURRENT (A)
g
25°C
F
V =10V
DS
125°C
TJ
Figure 13. Transconductance Variation with Drain
Current and Temperature.
Figure 14. SOT-223 Maximum Steady- State
Power Dissipation versus Copper
Mounting Pad Area.
Figure 17. Typical Transient Thermal Impedance Curve
.
Remark: Thermal characterization performed under the conditions of Note 1c. Should better thermal design employs, R
θ
JA
will be
lower and reach thermal equivalent sooner.
Figure 16. Maximum Safe Operating Area
.
0
0.2
2oz COPPER MOUNTING PAD AREA (in )
0.4
0.6
0.8
2
1
4
6
8
10
12
14
I
D
1c
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
V = 10V
0.1
0.5
V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
30
50
0.01
0.05
0.1
1
5
10
30
60
I
D
DC
1s
10ms
100ms
1ms
RDS(ON) LIMIT
V = 10V
SINGLE PULSE
R =See Note1c
T = 25°C
A
GS
θ
JA
100us
Figure 15. Maximum Steady-State
DrainCurrent versus Copper Mounting
Pad Area.
0
0.2
2oz COPPER MOUNTING PAD AREA (in )
0.4
0.6
0.8
2
1
0.5
1
1.5
2
2.5
3
3.5
S
1c
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
o
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
R JA
R JA
T - T = P * R (t)
P(pk)
t
1
t
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDT456P(J23Z) | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 7.5A I(D) | SOT-223 |
| NDT456 | P-Channel Enhancement Mode Field Effect Transistor |
| NDT456P | P-Channel Enhancement Mode Field Effect Transistor |
| NDTD2412 | ISOLATED 3W WIDE INPUT DUAL OUTPUT DC-DC CONVERTERS |
| NDT2412 | Isolated 3W Wide Input Dual Output DC-DC Converters |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDT455N(J23Z) | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 11.5A I(D) | SOT-223 |
| NDT456 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| NDT456P | 功能描述:MOSFET SOT-223 P-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDT456P(J23Z) | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 7.5A I(D) | SOT-223 |
| NDT456P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P LOGIC SOT-223 |
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