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參數(shù)資料
| 型號： | NDT014(J23Z) |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.7A I(D) | SOT-223 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 2.7AI（四）|的SOT - 223 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 225K |
| 代理商： | NDT014(J23Z) |
September 1996
NDT014
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
_________________________________________________________________________________________________________
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
NDT014
Units
V
DSS
Drain-Source Voltage
60
V
V
GSS
I
D
Gate-Source Voltage
±20
V
Drain Current
- Continuous
(Note 1a)
±2.7
A
- Pulsed
±10
P
D
Maximum Power Dissipation
(Note 1a)
3
W
(Note 1b)
1.3
(Note 1c)
1.1
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
* Order option J23Z for cropped center drain lead.
Thermal Resistance, Junction-to-Ambient
(Note 1a)
42
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
12
°C/W
NDT014 Rev. C1
Power SOT N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as DC motor control
and DC/DC conversion where fast switching, low in-line power
loss, and resistance to transients are needed.
2.7A, 60V. R
DS(ON)
= 0.2
@ V
GS
= 10V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
D
D
S
G
D
S
G
1997 Fairchild Semiconductor Corporation
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