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參數(shù)資料
| 型號： | NDT014(J23Z) |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.7A I(D) | SOT-223 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 2.7AI（四）|的SOT - 223 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 225K |
| 代理商： | NDT014(J23Z) |
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
I
SM
V
SD
t
rr
Maximum Continuous Drain-Source Diode Forward Current
2.7
A
Maximum Pulsed Drain-Source Diode Forward Current
22
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 2.7A
(Note 2)
V
GS
= 0 V, I
F
= 10 A, dI
F
/dt = 100 A/μs
0.95
1.6
V
Reverse Recovery Time
140
ns
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
P
D
(
t
) =
T
J
T
A
R
θ
J A
(
t
)
=
T
J
T
A
R
θ
J C
+
R
θ
CA
(
t
)
=
I
D
2
(
t
) ×
R
DS
(
ON
)
T
J
Typical R
θ
JA
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 42
o
C/W when mounted on a 1 in
2
pad of 2oz copper.
b. 95
o
C/W when mounted on a 0.066 in
2
pad of 2oz copper.
c. 110
o
C/W when mounted on a 0.0123 in
2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
NDT014 Rev. C1
1a
1b
1c
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