參數(shù)資料
型號(hào)： NDT453N
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Enhancement Mode Field Effect Transistor（8A，30V，0.028Ω）(N溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流8A, 漏源電壓30V，導(dǎo)通電阻0.028Ω）)
中文描述： 8 A, 30 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù)： 6/10頁(yè)
文件大小： 226K
代理商： NDT453N
NDT453N Rev. D1
0.1
0.2
0.5
V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
30
50
0.05
0.1
0.3
1
3
10
30
I
D
1s
100ms
10s
DC
10ms
RDS(ON) LIMIT
1ms
V = 10V
SINGLE PULSE
R = See Note 1c
T = 25°C
100us
Figure 13. Transconductance Variation with Drain
Current and Temperature.
Figure 16. Maximum Safe Operating
Area.
Typical Electrical and Thermal Characteristics
0
5
10
15
20
0
5
10
15
20
25
I , DRAIN CURRENT (A)
g
J
F
V = 15V
125°C
25°C
0
0.2
0.4
0.6
0.8
2
1
3
4
5
6
7
8
9
2oz COPPER MOUNTING PAD AREA (in )
I
D
1c
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
V = 10V
o
Figure 15. Maximum Steady-State Drain Current
versus Copper Mounting Pad Area.
0
0.2
2oz COPPER MOUNTING PAD AREA (in )
0.4
0.6
0.8
2
1
0.5
1
1.5
2
2.5
3
3.5
S
1c
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
o
Figure 14. SOT-223 Maximum Steady- State Power
Dissipation versus Copper Mounting Pad Area.
Figure 17. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
R JA
R JA
T - T = P * R (t)
P(pk)
t
1
t
2
相關(guān)PDF資料
PDF描述
NDT454P P-Channel Enhancement Mode Field Effect Transistor（-5.9A，-30V，0.05Ω）(P溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流-5.9A, 漏源電壓-30V，導(dǎo)通電阻0.05Ω）)
NDT454P(J23Z) TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 5.9A I(D) | SOT-223
NDT454 P-Channel Enhancement Mode Field Effect Transistor
NDT455N(J23Z) TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 11.5A I(D) | SOT-223
NDT455N N-Channel Enhancement Mode Field Effect Transistor（11.5A，30V，0.015Ω）(N溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流11.5A, 漏源電壓30V，導(dǎo)通電阻0.015Ω）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDT453N(J23Z) 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 8A I(D) | SOT-223
NDT453N_J23Z 功能描述:MOSFET 30V N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDT454 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel Enhancement Mode Field Effect Transistor
NDT454P 功能描述:MOSFET P-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDT454P(J23Z) 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 5.9A I(D) | SOT-223
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