參數(shù)資料
型號(hào)： NDT2955(J23Z)
廠商： Fairchild Semiconductor Corporation
英文描述： TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SOT-223
中文描述： 晶體管| MOSFET的| P通道| 60V的五（巴西）直| 2.5AI（四）|的SOT - 223
文件頁(yè)數(shù)： 3/6頁(yè)
文件大?。?/td> 92K
代理商： NDT2955(J23Z)
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
-2.3
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -2.5 A
(Note2)
-1.3
V
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
P
D
(
t
) =
T
J
T
A
R
θ
J A
(
t
)
=
T
J
T
A
R
θ
J C
+
R
θ
CA
(
t
)
=
I
D
2
(
t
)×
R
DS
(
ON
)
T
J
Typical R
θ
JA
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 42
o
C/W when mounted on a 1 in
2
pad of 2oz copper.
b. 95
o
C/W when mounted on a 0.066 in
2
pad of 2oz copper.
c. 110
o
C/W when mounted on a 0.0123 in
2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
NDT2955 Rev. B2
1a
1b
1c
相關(guān)PDF資料
PDF描述
NDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor（4A，60V，0.1Ω）(N溝道邏輯增強(qiáng)型場(chǎng)效應(yīng)管（漏電流4A, 漏源電壓60V，導(dǎo)通電阻0.1Ω）)
NDT3055 N-Channel Enhancement Mode Field Effect Transistor（4A，60V，0.1Ω）(N溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流4A, 漏源電壓60V，導(dǎo)通電阻0.1Ω）)
NDT410EL N-Channel Logic Level Enhancement Mode Field Effect Transistor（2.1A，100V，0.25Ω）(N溝道邏輯增強(qiáng)型場(chǎng)效應(yīng)管（漏電流2.1A, 漏源電壓100V，導(dǎo)通電阻0.25Ω）)
NDT410EL(J23Z) TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 2.1A I(D) | SOT-223
NDT451AN N-Channel Enhancement Mode Field Effect Transistor（7.2A，30V，0.035Ω）(N溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流7.2A, 漏源電壓30V，導(dǎo)通電阻0.035Ω）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDT3055 功能描述:MOSFET SOT-223 N-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDT3055(J23Z) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 4A I(D) | SOT-223
NDT3055_J23Z 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDT3055-CUT TAPE 制造商:FAIRCHILD 功能描述:NDT Series N-Channel 60 V 0.1 O Enhancement Mode Field Effect Transistor SOT-223
NDT3055L 功能描述:MOSFET SOT-223 N-CH LOGIC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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