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參數(shù)資料
| 型號： | NDT452AP |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor（-5A，-30V，0.065Ω）(P溝道增強型場效應管（漏電流-5A, 漏源電壓-30V，導通電阻0.065Ω）) |
| 中文描述： | 5 A, 30 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 92K |
| 代理商： | NDT452AP |
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 μA
V
DS
= -24 V, V
GS
= 0 V
-30
V
Zero Gate Voltage Drain Current
-1
μA
T
J
= 55°C
-10
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 μA
-1
-1.6
-2.8
V
T
J
= 125°C
-0.7
-1.2
-2.2
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -10 V, I
D
= -5.0 A
0.052
0.065
T
J
= 125°C
0.075
0.13
V
GS
= -4.5 V, I
D
= -4.3 A
V
GS
= -10 V, V
DS
= -5 V
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= -10 V, I
D
= -5.0 A
0.085
0.1
I
D(on)
On-State Drain Current
-15
A
-5
g
FS
DYNAMIC CHARACTERISTICS
Forward Transconductance
7
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= -15 V, V
GS
= 0 V,
f = 1.0 MHz
690
pF
Output Capacitance
430
pF
Reverse Transfer Capacitance
160
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Turn - On Delay Time
V
DD
= -10 V, I
D
= -1 A,
V
GEN
= -10 V, R
GEN
= 6
9
20
ns
Turn - On Rise Time
20
30
ns
Turn - Off Delay Time
40
50
ns
Turn - Off Fall Time
19
40
ns
Total Gate Charge
V
= -10 V,
I
D
= -5.0 A, V
GS
= -10 V
22
30
nC
Gate-Source Charge
3.2
nC
Gate-Drain Charge
5.2
nC
NDT452AP Rev. B1
相關PDF資料 |
PDF描述 |
|---|---|
| NDT453N(J23Z) | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 8A I(D) | SOT-223 |
| NDT453N | N-Channel Enhancement Mode Field Effect Transistor（8A，30V，0.028Ω）(N溝道增強型場效應管（漏電流8A, 漏源電壓30V，導通電阻0.028Ω）) |
| NDT454P | P-Channel Enhancement Mode Field Effect Transistor（-5.9A，-30V，0.05Ω）(P溝道增強型場效應管（漏電流-5.9A, 漏源電壓-30V，導通電阻0.05Ω）) |
| NDT454P(J23Z) | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 5.9A I(D) | SOT-223 |
| NDT454 | P-Channel Enhancement Mode Field Effect Transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NDT452AP(J23Z) | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 5A I(D) | SOT-223 |
| NDT452AP | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-223 |
| NDT452AP_J23Z | 功能描述:MOSFET P-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDT452AP-CUT TAPE | 制造商:FAIRCHILD 功能描述:NDT Series P-Ch 30V 0.065 O Enhancement Mode Field Effect Transistor SOT-223 |
| NDT452APX | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P-Channel 30V 5A SOT223 |
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