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參數(shù)資料
| 型號(hào)： | NDT454 |
| 廠商： | Fairchild Semiconductor Corporation |
| 元件分類(lèi)： | MOSFETs |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 的P -溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 6/6頁(yè) |
| 文件大?。?/td> | 92K |
| 代理商： | NDT454 |
NDT454P Rev. D2
-20
-15
-10
-5
0
0
4
8
12
16
20
I , DRAIN CURRENT (A)
g
TJ
25°C
F
V = -15V
125°C
Figure 13. Transconductance Variation with Drain
Current and Temperature.
Figure 16. Maximum Safe Operating Area.
Typical Electrical and ThermalCharacteristics
(continued)
0
0.2
0.4
0.6
0.8
2
1
2
3
4
5
6
7
2oz COPPER MOUNTING PAD AREA (in )
I
D
1c
1b
1a
4.5"x5" FR-4 Board
o
T = 25 C
Still Air
V = -10V
0
0.2
2oz COPPER MOUNTING PAD AREA (in )
0.4
0.6
0.8
2
1
0.5
1
1.5
2
2.5
3
3.5
S
1c
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
o
0.1
0.2
0.5
- V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
30
50
0.01
0.03
0.1
0.3
1
3
10
30
-
D
1s
10s
10ms
RDS(ON) LIMIT
1ms
V = -10V
SINGLE PULSE
R = See Note 1c
T = 25°C
100us
Figure 15. Maximum Steady-State Drain
Current versus Copper Mounting Pad
Area.
Figure 14. SOT-223 Maximum Steady-State Power
Dissipation versus Copper Mounting Pad
Area.
Figure 15. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
R JA
R JA
T - T = P * R (t)
P(pk)
t
1
t
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDT455N(J23Z) | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 11.5A I(D) | SOT-223 |
| NDT455N | N-Channel Enhancement Mode Field Effect Transistor（11.5A，30V，0.015Ω）(N溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流11.5A, 漏源電壓30V，導(dǎo)通電阻0.015Ω）) |
| NDT456P(J23Z) | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 7.5A I(D) | SOT-223 |
| NDT456 | P-Channel Enhancement Mode Field Effect Transistor |
| NDT456P | P-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDT454P | 功能描述:MOSFET P-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDT454P(J23Z) | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 5.9A I(D) | SOT-223 |
| NDT454P | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR |
| NDT455N | 功能描述:MOSFET SOT-223 N-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDT455N(J23Z) | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 11.5A I(D) | SOT-223 |
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