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參數(shù)資料
| 型號(hào)： | NDT454 |
| 廠商： | Fairchild Semiconductor Corporation |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 的P -溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 92K |
| 代理商： | NDT454 |
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 μA
V
DS
= -24 V, V
GS
= 0 V
V
DS
= -15 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
-30
V
Zero Gate Voltage Drain Current
-1
μA
T
J
= 70°C
-5
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
R
DS(ON)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 μA
V
GS
= -10 V, I
D
= -5.9 A
V
GS
= -6 V, I
D
= -5.2 A
V
GS
= -4.5 V, I
D
= -4.6 A
V
GS
= -10 V, V
DS
= -5 V
V
GS
= -4.5, V
DS
= -5V
V
DS
= 15 V, I
D
= 5.9 A
-1
-2.7
V
Static Drain-Source On-Resistance
0.038
0.05
0.046
0.07
0.064
0.09
I
D(on)
On-State Drain Current
-15
A
-5
g
FS
DYNAMIC CHARACTERISTICS
Forward Transconductance
10
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
950
pF
Output Capacitance
610
pF
Reverse Transfer Capacitance
220
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Turn - On Delay Time
V
DD
= -15 V, I
D
= -1 A,
V
GEN
= -10 V, R
GEN
= 6
10
30
ns
Turn - On Rise Time
18
60
ns
Turn - Off Delay Time
80
120
ns
Turn - Off Fall Time
45
100
ns
Total Gate Charge
V
= -15 V,
I
D
= -5.9 A, V
GS
= -10 V
29
40
nC
Gate-Source Charge
3
Gate-Drain Charge
11
NDT454P Rev. D2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDT455N(J23Z) | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 11.5A I(D) | SOT-223 |
| NDT455N | N-Channel Enhancement Mode Field Effect Transistor（11.5A，30V，0.015Ω）(N溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流11.5A, 漏源電壓30V，導(dǎo)通電阻0.015Ω）) |
| NDT456P(J23Z) | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 7.5A I(D) | SOT-223 |
| NDT456 | P-Channel Enhancement Mode Field Effect Transistor |
| NDT456P | P-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDT454P | 功能描述:MOSFET P-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDT454P(J23Z) | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 5.9A I(D) | SOT-223 |
| NDT454P | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR |
| NDT455N | 功能描述:MOSFET SOT-223 N-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDT455N(J23Z) | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 11.5A I(D) | SOT-223 |
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