參數(shù)資料
型號： NDT3055L
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Logic Level Enhancement Mode Field Effect Transistor（4A，60V，0.1Ω）(N溝道邏輯增強型場效應(yīng)管（漏電流4A, 漏源電壓60V，導(dǎo)通電阻0.1Ω）)
中文描述： 4 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 6/8頁
文件大?。?/td> 228K
代理商： NDT3055L
Dimensions are in millimeter
Pkg type
A0
B0
W
D0
D1
E1
E2
F
P1
P0
K0
T
Wc
Tc
SOT-223
(12mm)
6.83
+/-0.10
7.42
+/-0.10
12.0
+/-0.3
1.55
+/-0.05
1.50
+/-0.10
1.75
+/-0.10
10.25
min
5.50
+/-0.05
8.0
+/-0.1
4.0
+/-0.1
1.88
+/-0.10
0.292
+/-
0.0130
9.5
+/-0.025
0.06
+/-0.02
P1
A0
D1
P0
F
W
E1
D0
E2
B0
Tc
Wc
K0
T
Dimensions are in inches and millimeters
Tape Size
Reel
Option
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
12mm
7" Dia
7.00
177.8
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
5.906
150
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
12mm
13" Dia
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
7.00
178
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
See detail AA
Dim A
max
13" Diameter Option
7" Diameter Option
Dim A
Max
See detail AA
W3
W2 max Measured at Hub
W1 Measured at Hub
Dim N
Dim D
min
Dim C
B Min
DETAIL AA
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum component rotation
0.5mm
maximum
0.5mm
maximum
Sketch C (Top View)
Component lateral movement
Typical
component
cavity
center line
20 deg maximum
Typical
component
center line
B0
A0
Sketch B (Top View)
Component Rotation
Sketch A (Side or Front Sectional View)
Component Rotation
User Direction of Feed
SOT-223 Embossed Carrier Tape
Configuration:
Figure 3.0
SOT-223 Reel Configuration:
Figure 4.0
SOT-223 Tape and Reel Data and Package Dimensions, continued
July 1999, Rev. B
相關(guān)PDF資料
PDF描述
NDT3055 N-Channel Enhancement Mode Field Effect Transistor（4A，60V，0.1Ω）(N溝道增強型場效應(yīng)管（漏電流4A, 漏源電壓60V，導(dǎo)通電阻0.1Ω）)
NDT410EL N-Channel Logic Level Enhancement Mode Field Effect Transistor（2.1A，100V，0.25Ω）(N溝道邏輯增強型場效應(yīng)管（漏電流2.1A, 漏源電壓100V，導(dǎo)通電阻0.25Ω）)
NDT410EL(J23Z) TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 2.1A I(D) | SOT-223
NDT451AN N-Channel Enhancement Mode Field Effect Transistor（7.2A，30V，0.035Ω）(N溝道增強型場效應(yīng)管（漏電流7.2A, 漏源電壓30V，導(dǎo)通電阻0.035Ω）)
NDT451N N-Channel Enhancement Mode Field Effect Transistor（5.5A，30V，0.05Ω）(N溝道增強型場效應(yīng)管（漏電流5.5A, 漏源電壓30V，導(dǎo)通電阻0.05Ω）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDT3055L(J23Z) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 3.7A I(D) | SOT-223
NDT3055L 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-223
NDT3055L_Q 功能描述:MOSFET SOT-223 N-CH LOGIC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDT3055LX 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-Channel 60V 4A SOT223
NDT410EL 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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