
STD130
5-130
Samsung ASIC
ARFRAM_HD
High-Density Multi-Port Asynchronous Register File
Characteristics
Definition for AC Timing
(ns)
Symbol
t
wcyc
t
ckl
t
ckh
t
was
t
wah
t
ws
t
wh
t
ds
t
dh
t
wwc
t
wda
t
wacc
t
rcyc
t
acc
t
ras
t
rah
t
da
t
zd
t
dz
t
od
Definition for Power Consumption
(
μ
W/MHz)
Power_read
The dynamic average power consumption while in a read cycle
Power_write
The dynamic average power consumption while in a write cycle
Power_w_standby
The write standby power consumption while WEN is high and other signals are in
normal operations.
Power_r_standby
The read standby power consumption while REN is high, OEN is low and other sig-
nals are in normal operations.
Definition for Area
(
μ
m)
Width
The physical width in X-direction
Height
The physical height in Y-direction
Description
Miminum write clock cycle time for write cycle
Mimimum CK pulse width low to guarantee write cycle
Mimimum CK pulse width high to guarantee write cycle
Write Address Setup time from WA[] to CK rise
Write Address Hold time from CK rise to WA[]
WEN Setup time from WEN fall to CK rise
WEN Hold time from CK rise to WEN rise
Data-in Setup time from DI[] to CK rise
Data-in Hold time from CK rise to DI[]
Write-Write contention time from one CK to the other CK
De-access time from CK rise to DOUT
Data Access time from CK fall
Miminum RA[] Cycle time for read cycle
Data ACCess time for read cycle
Read Address Setup time from RA[] to REN rise
Read Address Hold time from REN rise to RA[]
De-Access time
from RA to DOUT
DOUT high-Z to Drive time
DOUT Drive to high-Z time
OEN to valid output time