
ELECTRICAL CHARACTERISTICS
DC ELECTRICAL CHARACTERISTICS
Samsung ASIC
2-1
STD130
DC ELECTRICAL CHARACTERISTICS
The following tables define the DC electrical characteristics for the standard LVCMOS I/O buffers
described in Chapter 4: “Input/Output Cells.” The DC electrical characteristics for standard bus
interface I/O buffers such as USB 1.1 and PCI follow the desciptions of those buffer cells in Chapter 4.
V
DD
= 1.8V
±
0.15V, T
A
= -40 to 85
°
C, V
EXT
= 3.3V
±
0.3V (In case of 3.3V tolerant)
Symbol
V
IH
Parameter
Condition
Min
Type
Max
Unit
High level input voltage
LVCMOS interface
Low level input voltage
LVCMOS interface
Switching threshold
Schmitt trigger, positive-going
threshold
Schmitt trigger, negative-going
threshold
High level input current
Input buffer
Input buffer with pull-down
Low level input current
Input buffer
Input buffer with pull-up
High level output voltage
Type B1 to B12
Type B1
Type B2
Type B4
Type B8
Type B12
Type B16
Type B20
Type B24
Low level output voltage
Type B1 to B12
Type B1
Type B2
Type B4
Type B8
Type B12
Type B16
Type B20
Type B24
Tri-state output leakage current
Quiescent supply current
Input capacitance
V
1.27
V
IL
V
0.57
VT
VT
+
0.5V
DD
V
CMOS
1.27
V
VT
-
CMOS
0.57
V
I
IH
μ
A
V
IN
= V
DD
–10
5
10
40
18
I
IL
μ
A
V
IN
= V
SS
–10
–40
10
–5
–18
V
OH
V
I
OH
= –1
μ
A
I
OH
= –1mA
I
OH
= –2mA
I
OH
= –4mA
I
OH
= –8mA
I
OH
= –12mA
I
OH
= –16mA
I
OH
= –20mA
I
OH
= –24mA
V
DD
– 0.05
1.2
V
OL
V
I
OL
= 1
μ
A
I
OL
= 1mA
I
OL
= 2mA
I
OL
= 4mA
I
OL
= 8mA
I
OL
= 12mA
I
OL
= 16mA
I
OL
= 20mA
I
OL
= 24mA
V
OUT
= V
SS
or V
DD
0.05
0.45
I
OZ
I
DD
C
IN
–10
10
100
μ
A
μ
A
Any input and
Bi-directional buffers
Any output buffer
4
pF
C
OUT
Output capacitance
4
pF