
Samsung ASIC
5-71
STD130
SPARAM_HD
High-Density Single-Port Asynchronous Static RAM
Logic Symbol
Function Description
SPARAM_HD is a single-port asynchronous static RAM which is provided as a compiler. SPARAM_HD is
intended for use in high-density applications. At the falling edge of WEN, the write cycle is initiated. At the
rising edge of WEN, the write cycle is ended. During the write cycle, the data on DI[] is written into the
memory location specified on A[]. The read cycle is initiated when WEN is high and CSN is low. The data at
DOUT[] become valid after a delay whenever A[] transition is detected. While in standby mode that CSN is
high, A[] and DI[] are disabled, data stored in the memory is retained and DOUT[] remains stable. When
OEN is high, DOUT[] is placed in a high-impedance state.
SPARAM_HD Function Table
CSN
X
H
L
L
L
L
WEN
X
X
↓
↑
L
H
OEN
H
L
L
L
L
L
A
X
X
DI
X
X
DOUT
Z
DOUT(t-1)
DOUT(t-1)
MEM(A)
DOUT(t-1)
MEM(A)
Comment
Unconditional tri-state output
De-selected (standby mode)
Write cycle starts
Write cycle ends and read cycle starts
Write cycle
Read cycle
Valid
Valid
Stable
Toggle
Valid
Valid
Valid
X
Features
Suitable for high-density application
Separated data I/O
Asynchronous operation
Asynchronous tri-state output
Address transition detector
Write-enable transition detector
Chip-select transition detector
Bank-select transition detector
Automatic power-down mode available
Low noise output optimization
Zero standby current
Zero hold time for DI
Flexible aspect ratio
Dual bank scheme available
Up to 512K bits capacity
Up to 32K number of words
Up to 128 number of bit per word
CSN
WEN
OEN
A [m-1:0]
DI [b-1:0]
sparam_hd_<w>x<b>m<y>b<ba>
DOUT [b-1:0]
NOTES:
1. Words (w) is the number of words.
2. Bpw (b) is the number of bits per word.
3. Ymux (y) is one of the column mux types.
4. Banks(ba) is the number of banks.
5. m =
log
2
w