
Samsung ASIC
5-103
STD130
DROM_HD
High-Density Synchronous Diffusion Programmable ROM
Parameter Description
DROM_HD is the compiler that automatically generates symbol, netlist, timing model, power model and
layout according to the following parameters; Number of words(w), Number of bits per word(b) and Column
mux(y) and Number of banks(ba).
Pin Descriptions
Pin Capacitance
(Unit = SL)
NOTE:
 Each pin’s capacitance is exactly same regardless of available mux types for same bank.
Parameters
ba = 1
Ymux = 8
64
2048
32
128
4096
64
2
128
1
Ymux = 16
128
4096
64
256
8192
128
2
64
1
Ymux = 32
256
8192
128
512
16384
256
2
32
1
Words (w)
Min
Max
Step
Min
Max
Step
Min
Max
Step
ba = 2
Bpw (b)
Name
CK
I/O
Description
Clock
Clock input. CSN and A[] are latched into the ROM on the rising edge of CK. If CSN
is low on the rising edge of CK, the ROM is in read mode.
Chip enable input. The chip enable is active-low and is latched into the ROM on the
rising edge of CK. When CSN is low, the ROM is enabled for reading. When CSN is
high, the ROM goes to the standby mode and is disabled for reading. DOUT
remains previous data output.
Data output enable input. The data output enable is asynchronously operated
regardless of any inputs. When OEN is high, DOUT is disabled and goes to
high-impedance state.
Address input bus. The address is latched into the ROM on the rising edge of CK.
Data output bus. Data output is valid after the rising edge of CK while the ROM is in
read mode.
CSN
Chip
Enable
OEN
Data
Output
Enable
Address
Data
Output
A [ ]
DOUT [ ]
CK
6.21
4.04
CSN
2.40
2.40
OEN
2.56
2.56
A
DOUT
10.25
10.25
ba = 1
ba = 2
2.58
2.58