
Samsung ASIC
4-141
STD130
PCI BUFFERS
Option
(note3)
NOTE3:
Voltage detector circuit will automatically set the EN5V pin either high or low according to VIO voltage level.
Electrical Characteristics
DC Characteristics
AC Characteristics
Power Cell Name
VDD1IH_PCI
VDD3OP_PCI
VDD5O_PCI
VSS3I_PCI
VSS3OP_PCI
Description
1.8V Power cell for internal core and PCI I/Os
3.3V Power cell for PCI I/Os
VIO(3.3V or 5V) Power cell for PCI I/Os
(note2)
Gnd Power cell for internal core; not used for PCI I/Os
Gnd Power cell for PCI I/Os
Cell Name
Description
VDET_130PCI
3.3V or 5V voltage detector
Symbol
Parameter
3.3V Signaling
5V Signaling
Unit
Condition
Min
Max
Condition
Min
Max
V
CC
V
IO
V
ih
V
il
I
i
V
oh
V
ol
Supply Voltage
3.0
3.6
3.0
3.6
V
V
IO
Voltage
Input high voltage
V
CC
4.75
5.25
V
0.47V
CC
–0.5
V
CC
+0.5
0.33V
CC
10
1.9
V
IO
+0.5
0.9
V
Input low voltage
–0.5
V
Input leakage current
0 < V
IN
< V
CC
I
OUT
= –500
μ
A
I
OUT
= 1500
μ
A
–10
0 < V
IN
< V
IO
I
OUT
= –2mA
I
OUT
= 6mA
–70
70
μ
A
Output high voltage
0.9V
CC
–
–
2.4
–
V
Output low voltage
0.1V
CC
–
0.55
V
Symbol
Parameter
3.3V Signaling (66MHz)
5V Signaling (33MHz)
Unit
Condition
Min
Max
Condition
Min
Max
I
oh (AC)
Switching
current high
V
OUT
= 0.3V
CC
V
OUT
= 0.7V
CC
V
OUT
= 0.9V
CC
V
OUT
= 0.6V
CC
V
OUT
= 0.1V
CC
V
OUT
= 0.18V
CC
–12V
CC
V
OUT
= 1.4V
V
OUT
= 2.4V
V
OUT
= 3.0V
V
OUT
= 2.2V
V
OUT
= 0.55V
V
OUT
= 0.71V
–44
mA
–32V
CC
–2.33
–1.71V
CC
16V
CC
2.67V
CC
–142
I
ol (AC)
Switching
current low
95
mA
23.9
38V
CC
206
I
cl
Low clamp
current
–3
<
V
IN
≤
–1
–25 +
(V
IN
+1)/0.015
25+(V
IN
–V
CC
–1)
/0.015
–5
<
V
IN
≤
–1
–25 + (V
IN
+1)
/0.015
mA
I
ch
High clamp
current
V
CC
+1
≤
V
IN
< V
CC
+4
mA
T
r
Output rise
time
0.3V
CC
to 0.6V
CC
1.0
4.0
0.4V to 2.4V
1.0
5.0
V/ns
T
f
Output fall
time
0.6V
CC
to 0.3V
CC
1.0
4.0
2.4V to 0.4V
1.0
5.0
V/ns