參數(shù)資料
型號: 82439TX
廠商: INTEL CORP
元件分類: 存儲控制器/管理單元
英文描述: System Controller(系統(tǒng)控制器)
中文描述: 256M X 8, DRAM CONTROLLER, PBGA324
封裝: BGA-324
文件頁數(shù): 40/83頁
文件大?。?/td> 461K
代理商: 82439TX
82439TX (MTXC)
E
40
PRELIMINARY
3.1.23.
DRTH
DRAM ROW TYPE REGISTER HIGH
Address Offset:
Default Value:
Access:
67h
S0000000
Read/Write
This 8-bit register identifies the type of DRAM (EDO, SPM (standard page mode)), or SDRAM (synchronous
DRAM) used in rows 4 and 5 and should be programmed by BIOS for optimum performance if EDO DRAMs or
SDRAMs are used. The MTXC uses these bits to determine the correct cycle timing to use before a DRAM cycle
is run.
Bit 7 of this register is used for Host Frequency Detection (HFD). Bit 2 of this register is used to determine
the muxing results of CKE/MAA0 and CKEB/MAA1.
NOTE
This register should not be written while DRAM refresh is enabled.
Bit
Description
7
Host Frequency Detection (HFD)
.
1=66 MHz. 0=60 MHz. This bit is initialized to the inverted level
on the A27 signal at the rising edge of the RST#. Since A27 pin contains an internal weak pulldown,
unless an external resistor exits, the field is initialized to 1, indicating 66 MHz. Subsequent writes to
this field will override the reset strap value. BIOS can use the value to determine if the system is
60 MHz (external pull-up) or 66 MHz (no strapping).
5:4,
1:0
DRAM Row Type (DRT).
The DRT bits select the DRAM type installed in each physical DRAM
Row. Each one-of-four bit pairs in this register corresponds to the DRAM row identified by the
corresponding DRB register.
DRT Bits
5,1
4,0
DRAM Row
5
4
DRT
0,0
0,1
1,0
1,1
DRAM Type value definitions
SPM DRAM
EDO DRAM
SDRAM
Reserved
6,3
Reserved.
2
Memory Address Select Enable (MASELEN).
When this bit is set to 1, CKE and CKEB are used to
propagate the second copy of the MA0 and MA1 lines. CKE is muxed with MAA0 and CKEB is
muxed with MAA1. When this bit is set to 0, the CKE and CKEB functionality is propagated across
these lines. This bit defaults to 0 and BIOS must set it to 1 to take advantage of the second copy of
the MA0 and MA1 lines.
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