| 型號(hào) | 廠商 | 描述 |
| 2n6403 2 3 4 5 6 |
ON SEMICONDUCTOR | 16 Ampere RMS Reverse Blocking Thyristor(16A（均方根值），400V硅控整流器反向截止晶閘管) |
| 2n6404 2 3 4 5 6 |
ON SEMICONDUCTOR | 16 Ampere RMS Reverse Blocking Thyristor(16A（均方根值），600V硅控整流器反向截止晶閘管) |
| 2n6405 2 3 4 5 6 |
ON SEMICONDUCTOR | 16 Ampere RMS Reverse Blocking Thyristor(16A（均方根值），800V硅控整流器反向截止晶閘管) |
| 2n6401g 2 3 4 5 6 |
ON SEMICONDUCTOR | Silicon Controlled Rectifiers SCRs 16 AMPERES RMS 50 thru 800 VOLTS |
| 2n6405g 2 3 4 5 6 |
ON SEMICONDUCTOR | Silicon Controlled Rectifiers SCRs 16 AMPERES RMS 50 thru 800 VOLTS |
| 2n6426g 2 3 4 5 6 |
ON SEMICONDUCTOR | Darlington Transistors NPN Silicon |
| 2n6426rlrag 2 3 4 5 6 |
ON SEMICONDUCTOR | Darlington Transistors NPN Silicon |
| 2n6427g 2 3 4 5 6 |
ON SEMICONDUCTOR | Darlington Transistors NPN Silicon |
| 2n6427rlrag 2 3 4 5 6 |
ON SEMICONDUCTOR | Darlington Transistors NPN Silicon |
| 2n6429 |
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 200MA I(C) | TO-92 | |
| 2n6439 2 3 4 5 6 |
POWER TRANSISTOR | |
| 2n6439 2 3 4 5 6 |
MOTOROLA INC | 60 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON |
| 2n6477 2 3 4 5 |
Electronic Theatre Controls, Inc. | Shrink Tubing; Tubing Size Diameter:0.5"; Wall Thickness Recovered Nominal:0.055"; Inner Diameter Max Recovered:0.195"; Expanded Inner Diameter:0.500"; Material:Polyolefin |
| 2n6478 2 3 4 5 |
Electronic Theatre Controls, Inc. | MEDIUM POWER SILICON NPN TRANSISTORS |
| 2n6488 2 3 4 5 6 7 |
ON SEMICONDUCTOR | Complementary Silicon Plastic Power Transistor(15A，75W，80V（集電極-發(fā)射極），補(bǔ)償型，硅NPN功率晶體管) |
| 2n6504g 2 3 4 5 6 7 |
ON SEMICONDUCTOR | Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS |
| 2n6505g 2 3 4 5 6 7 |
ON SEMICONDUCTOR | Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS |
| 2n6505t 2 3 4 5 6 7 |
ON SEMICONDUCTOR | Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS |
| 2n6505tg 2 3 4 5 6 7 |
ON SEMICONDUCTOR | Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS |
| 2n6507g 2 3 4 5 6 7 |
ON SEMICONDUCTOR | Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS |
| 2n6507t 2 3 4 5 6 7 |
ON SEMICONDUCTOR | Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS |
| 2n6507tg 2 3 4 5 6 7 |
ON SEMICONDUCTOR | Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS |
| 2n6508g 2 3 4 5 6 7 |
ON SEMICONDUCTOR | Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS |
| 2n6509g 2 3 4 5 6 7 |
ON SEMICONDUCTOR | Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS |
| 2n6509t 2 3 4 5 6 7 |
ON SEMICONDUCTOR | Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS |
| 2n6509tg 2 3 4 5 6 7 |
ON SEMICONDUCTOR | Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS |
| 2n6504 2 3 4 5 6 7 |
ON SEMICONDUCTOR | Reverse Blocking Thyristor(25A（均方根值），50V硅控整流器反向截止晶閘管) |
| 2n6505 2 3 4 5 6 7 8 |
ON SEMICONDUCTOR | Silicon Controlled Rectifiers |
| 2n6507 2 3 4 5 6 7 8 |
ON SEMICONDUCTOR | Silicon Controlled Rectifiers |
| 2n6508 2 3 4 5 6 7 8 |
ON SEMICONDUCTOR | Silicon Controlled Rectifiers |
| 2n6509 2 3 4 5 6 7 8 |
ON SEMICONDUCTOR | Silicon Controlled Rectifiers |
| 2n6515 2 3 |
FAIRCHILD SEMICONDUCTOR CORP | NPN High Voltage Transistor(NPN型高電壓晶體管) |
| 2n6516 2 |
FAIRCHILD SEMICONDUCTOR CORP | NPN High Voltage Transistor(NPN型高電壓晶體管) |
| 2n6517 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
Electronic Theatre Controls, Inc. | Mini size of Discrete semiconductor elements |
| 2n6718l 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
Electronic Theatre Controls, Inc. | Mini size of Discrete semiconductor elements |
| 2n6519 2 3 4 5 6 7 8 |
ON SEMICONDUCTOR | High Voltage PNP Transistor(300V高壓PNP晶體管) |
| 2n6519 2 |
FAIRCHILD SEMICONDUCTOR CORP | PNP High Voltage Transistor(PNP型高電壓晶體管) |
| 2n6520 2 3 4 |
FAIRCHILD SEMICONDUCTOR CORP | PNP High Voltage Transistor(PNP型高電壓晶體管) |
| 2n6530 2 3 4 5 6 |
Electronic Theatre Controls, Inc. | 8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS |
| 2n6533 2 3 4 5 6 |
Electronic Theatre Controls, Inc. | 8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS |
| 2n6531 2 3 4 5 6 |
Electronic Theatre Controls, Inc. | 8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS |
| 2n6532 2 3 4 5 6 |
Electronic Theatre Controls, Inc. | 8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS |
| 2n6547 2 3 4 5 6 7 8 |
ON SEMICONDUCTOR | Switching NPN Silicon Power Transistor(開(kāi)關(guān)型硅NPN功率晶體管) |
| 2n6620 2 3 4 |
SIEMENS AG | NPN SILICON TRANSISTOR FOR LOW NOISE RF BROADBAND AMPLIFIER |
| 2n6621 2 3 |
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 25MA I(C) | MACRO-T | |
| 2n662 2 3 |
Electronic Theatre Controls, Inc. | alloy-junction germanium transistors |
| 2n6660 2 |
ELAN Microelctronics Corp . | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓60V,N溝道增強(qiáng)型垂直DMOS場(chǎng)效應(yīng)管) |
| 2n6661 2 |
ELAN Microelctronics Corp . | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓90V,N溝道增強(qiáng)型垂直DMOS場(chǎng)效應(yīng)管) |
| 2n6667g 2 3 4 5 6 |
ON SEMICONDUCTOR | Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60−80 V, 65 W |
| 2n6668g 2 3 4 5 6 |
ON SEMICONDUCTOR | Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60−80 V, 65 W |