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參數資料
| 型號： | 2N6667G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60−80 V, 65 W |
| 中文描述： | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | LEAD FREE, CASE 221A-09, 3 PIN |
| 文件頁數： | 4/6頁 |
| 文件大小： | 89K |
| 代理商： | 2N6667G |
2N6667, 2N6668
http://onsemi.com
4
BONDING WIRE LIMIT
THERMAL LIMIT @ T
C
= 25
°
C
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW RATED V
CEO
20
1
Figure 6. Maximum Safe Operating Area
2
0.02
10
20
100
T
J
= 150
°
C
0.2
5
3
0.5
0.3
I
0.05
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
10
50
1
0.1
dc
2
70
3
7
2N6667
2N6668
1 ms
100
μ
s
5 ms
0.03
5
30
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on T
J(pk)
= 150 C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
< 150 C. T
J(pk)
may be calculated from the data in Figure 5.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
10,000
1
Figure 7. Typical SmallSignal Current Gain
f, FREQUENCY (kHz)
10
2
5
10
20
50
100
200
1000
500
100
5000
h
20
200
500
2000
1000
50
T
C
= 25
°
C
V
CE
= 4 VOLTS
I
C
= 3 AMPS
300
0.1
Figure 8. Typical Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
30
1
2
5
20
100
10
C
200
100
70
50
C
ib
C
ob
50
0.2
0.5
T
J
= 25
°
C
3
7
70
30
300
V
0.1
Figure 9. Typical DC Current Gain
I
C
, COLLECTOR CURRENT (AMPS)
0.2
0.3
0.5
0.7
1
2
10
500
300
200
h
T
J
= 150
°
C
V
CE
= 3 V
7
20,000
5000
10,000
3000
2000
1000
700
3
5
Figure 10. Typical Collector Saturation Region
2.6
I
B
, BASE CURRENT (mA)
0.3
0.5
1
2
3
5
7
30
2.2
1.8
1.4
1
I
C
= 2 A
T
J
= 25
°
C
4 A
6 A
0.6
0.7
20
10
T
J
= 55
°
C
7000
T
J
= 25
°
C
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N6668 | 功能描述:兩極晶體管 - BJT PNP Pwr Darlington RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6668 | 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-220 |
| 2N6668G | 功能描述:達林頓晶體管 10A 80V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6671 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 300V 8A 3PIN TO-3 - Bulk |
| 2N6672 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 350V 8A 3PIN TO-3 - Bulk |
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