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參數(shù)資料
| 型號(hào)： | 2N6689 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN POWER SILICON TRANSISTOR |
| 中文描述： | 15 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-61 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 60K |
| 代理商： | 2N6689 |
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 537
Devices
Qualified Level
2N6674
2N6675
2N6689
2N6690
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
2N6674
2N6689
300
450
450
2N6675
2N6690
400
650
650
7.0
5.0
15
2N6689
2N6690
3.0
(3)
175
-65 to +200
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
V
CEO
V
CBO
V
CEX
V
EBO
I
B
I
C
Vdc
Vdc
Vdc
Vdc
Adc
Adc
2N6674
2N6675
6.0
(2)
175
Total Power Dissipation
Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 1.0 W/
0
C for T
C
> 25
0
C
2) Derate linearly 34.2 mW/
0
C for T
A
> 25
0
C
3)
Derate linearly 17.1 mW/
0
C for T
A
> 25
0
C
@ T
A
= +25
0
C
@ T
C
= +25
0
C
(1)
P
T
W
W
0
C
T
op;
T
stg
Symbol
R
θ
JC
Max.
1.0
Unit
0
C/W
2N6674, 2N6675
TO-3 (TO-204AA)*
2N6689, 2N6690
TO-61*
* See Appendix A for Package
Outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc
Collector-Emitter Cutoff Current
V
CE
= 450 Vdc, V
BE
= -1.5 Vdc
V
CE
= 650 Vdc, V
BE
= -1.5 Vdc
Symbol
Min.
Max.
Unit
2N6674, 2N6689
2N6675, 2N6690
V
(BR)
CEO
300
400
Vdc
2N6674, 2N6689
2N6675, 2N6690
I
CEX
0.1
0.1
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
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| 2N669 | 制造商:Motorola 功能描述:_ |
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| 2N6691 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 300V 15A 3PIN TO-61 - Bulk |
| 2N6692 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 350V 15A 3PIN TO-61 - Bulk |
| 2N6693 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 400V 15A 3PIN TO-61 - Bulk |
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