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參數(shù)資料
| 型號： | 2N6710 |
| 英文描述： | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-237VAR |
| 中文描述： | 晶體管|晶體管|進步黨| 80V的五（巴西）總裁| 1A條一（c）|至237VAR |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 2N6710 |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP SILICON PLANAR EPITAXIAL TRANSISTOR
2N6710
TO-237
Plastic Package
General Purpose Medium Power Amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25oC)
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Total Power Dissipation
Operating And Storage Junction
Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
D
T
j
, T
stg
VALUE
100
80
5
1.5
850
-55 to +150
UNIT
V
V
V
A
mW
oC
ELECTRICAL CHARACTERISTICS (Ta=25oC Unless Specified Otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
SYMBOL TEST CONDITION
V
CEO
I
C
=10mA, I
B
=0
V
CBO
I
C
=100
μ
A, I
E
=0
V
EBO
I
E
=10
μ
A, I
C
=0
I
CBO
V
CB
=100V, I
E
=0
I
EBO
V
EB
=4V, I
C
=0
h
FE
I
C
=50mA,V
CE
=2V
I
C
=250mA,V
CE
=2V
I
C
=500mA,V
CE
=2V
V
CE(sat)
I
C
=500mA,I
B
=50mA
I
C
=1A,I
B
=100mA
f
T
V
CE
=10V, I
C
=50mA,
MIN
80
100
5
MAX
UNIT
V
V
V
μ
A
μ
A
0.1
0.1
40
40
25
250
Collector Emitter Saturation Voltage
0.5
1
V
V
Transition Frequency
50
MHz
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6711 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 100MA I(C) | TO-237VAR |
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