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參數(shù)資料
| 型號(hào)： | 2N6668G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60−80 V, 65 W |
| 中文描述： | 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | LEAD FREE, CASE 221A-09, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 89K |
| 代理商： | 2N6668G |
Semiconductor Components Industries, LLC, 2005
June, 2005 Rev. 5
1
Publication Order Number:
2N6667/D
2N6667, 2N6668
Darlington Silicon
Power Transistors
Designed for generalpurpose amplifier and low speed switching
applications.
High DC Current Gain
h
FE
= 3500 (Typ) @ I
C
= 4.0 Adc
CollectorEmitter Sustaining Voltage @ 200 mAdc
V
CEO(sus)
= 60 Vdc (Min) 2N6667
= 80 Vdc (Min) 2N6668
Low CollectorEmitter Saturation Voltage
V
CE(sat)
= 2.0 Vdc (Max)@ I
C
= 5.0 Adc
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors
TO220AB Compact Package
Complementary to 2N6387, 2N6388
PbFree Packages are Available*
Figure 1. Darlington Schematic
BASE
EMITTER
COLLECTOR
≈
8 k
≈
120
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device
Package
Shipping
ORDERING INFORMATION
2N6667
TO220AB
50 Units/Rail
MARKING
DIAGRAM
PNP SILICON
DARLINGTON
POWER TRANSISTORS
10 A, 6080 V, 65 W
x
A
Y
WW = Work Week
G
= PbFree Package
= 7 or 8
= Assembly Location
= Year
2N6667G
TO220AB
(PbFree)
50 Units/Rail
2N6668
TO220AB
50 Units/Rail
2N6668G
TO220AB
(PbFree)
50 Units/Rail
http://onsemi.com
CASE 221A09
TO220AB
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
123
4
2N666x
AYWWG
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