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參數(shù)資料
| 型號： | 2N6668G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60−80 V, 65 W |
| 中文描述： | 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | LEAD FREE, CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 89K |
| 代理商： | 2N6668G |
2N6667, 2N6668
http://onsemi.com
3
Figure 2. Switching Times Test Circuit
0
V
CC
30 V
SCOPE
TUT
+ 4.0 V
t
r
, t
f
DUTY CYCLE = 1.0%
10 ns
R
C
D
1
, MUST BE FAST RECOVERY TYPES e.g.,
1N5825 USED ABOVE I
MSD6100 USED BELOW I
B
100 mA
100 mA
B
25
μ
s
D
1
51
R
B
& R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
V
2
APPROX
+ 8 V
V
1
APPROX
12 V
8 k
120
FOR t
d
AND t
r
, D
1
IS DISCONNECTED AND V
2
= 0
R
B
t
80
40
20
0
20
40
80
100
120
160
Figure 3. Power Derating
T, TEMPERATURE (
°
C)
P
60
T
A
4
T
C
2
1
3
0
60
140
T
A
T
C
0.1
Figure 4. Typical Switching Times
I
C
, COLLECTOR CURRENT (AMPS)
5
0.7
0.5
0.3
0.2
0.2
10
V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25
°
C
t
f
1
5
t
s
t
r
0.1
1
3
0.5
2
.t
d
2
7
0.3
0.7
3
7
10
Figure 5. Thermal Response
t, TIME (ms)
1
0.01
0.01
0.5
0.3
0.2
0.1
0.05
0.03
0.02
0.02
r
T
0.05
0.1
0.2
0.5
1
2
5
10
20
50
100
200
1000
500
Z
θ
JC
(t) = r(t) R
θ
JC
R
θ
JC
= 1.92
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
T
C
= P
(pk)
R
θ
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
SINGLE PULSE
0.05
0.1
0.02
0.01
0.2
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