參數(shù)資料
型號(hào): 2N6668G
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60−80 V, 65 W
中文描述: 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
封裝: LEAD FREE, CASE 221A-09, 3 PIN
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 89K
代理商: 2N6668G
2N6667, 2N6668
http://onsemi.com
2
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
Peak
15
Base Current
Total Device Dissipation @ T
= 25 C
Derate above 25 C
I
250
65
0.52
mAdc
W
W/ C
P
Total Device Dissipation @ T
A
= 25 C
P
D
2.0
W
J
stg
1. Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width
300 s, Duty Cycle
2%.
2N6668
JC
JA
ELECTRICAL CHARACTERISTICS
(Note 1)
(T
C
= 25 C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 2)
(V
CE
= 80 Vdc, I
B
= 0)
Collector Cutoff Current
CE
EB(off)
(V
CE
= 60 Vdc, V
EB(off
) = 1.5 Vdc, T
C
= 125 C)
CE
EB(off)
C
2N6667
V
CEO(sus)
60
Vdc
2N6667
1.0
CEX
3.0
mAdc
(I
C
= 10 Adc, V
CE
= 3.0 Vdc)
CollectorEmitter Saturation Voltage(I
C
= 5.0 Adc, I
B
= 0.01 Adc)
(I
C
= 10 Adc, I
B
= 0.1 Adc)
DYNAMIC CHARACTERISTICS
Output Capacitance (V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
CE
100
V
2.0
Vdc
4.5
Current Gain Bandwidth Product (I
C
= 1.0 Adc, V
CE
= 5.0 Vdc, f
test
= 1.0 MHz)
|h
fe
|
C
ob
fe
20
200
pF
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