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參數(shù)資料
| 型號(hào)： | 2N6667G |
| 廠(chǎng)商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60−80 V, 65 W |
| 中文描述： | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | LEAD FREE, CASE 221A-09, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 89K |
| 代理商： | 2N6667G |
Semiconductor Components Industries, LLC, 2005
June, 2005 Rev. 5
1
Publication Order Number:
2N6667/D
2N6667, 2N6668
Darlington Silicon
Power Transistors
Designed for generalpurpose amplifier and low speed switching
applications.
High DC Current Gain
h
FE
= 3500 (Typ) @ I
C
= 4.0 Adc
CollectorEmitter Sustaining Voltage @ 200 mAdc
V
CEO(sus)
= 60 Vdc (Min) 2N6667
= 80 Vdc (Min) 2N6668
Low CollectorEmitter Saturation Voltage
V
CE(sat)
= 2.0 Vdc (Max)@ I
C
= 5.0 Adc
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors
TO220AB Compact Package
Complementary to 2N6387, 2N6388
PbFree Packages are Available*
Figure 1. Darlington Schematic
BASE
EMITTER
COLLECTOR
≈
8 k
≈
120
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device
Package
Shipping
ORDERING INFORMATION
2N6667
TO220AB
50 Units/Rail
MARKING
DIAGRAM
PNP SILICON
DARLINGTON
POWER TRANSISTORS
10 A, 6080 V, 65 W
x
A
Y
WW = Work Week
G
= PbFree Package
= 7 or 8
= Assembly Location
= Year
2N6667G
TO220AB
(PbFree)
50 Units/Rail
2N6668
TO220AB
50 Units/Rail
2N6668G
TO220AB
(PbFree)
50 Units/Rail
http://onsemi.com
CASE 221A09
TO220AB
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
123
4
2N666x
AYWWG
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6668G | Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60−80 V, 65 W |
| 2N6690 | NPN POWER SILICON TRANSISTOR |
| 2N6689 | NPN POWER SILICON TRANSISTOR |
| 2N6691 | NPN POWER SILICON TRANSISTOR |
| 2N6693 | NPN POWER SILICON TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6668 | 功能描述:兩極晶體管 - BJT PNP Pwr Darlington RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6668 | 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-220 |
| 2N6668G | 功能描述:達(dá)林頓晶體管 10A 80V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6671 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 300V 8A 3PIN TO-3 - Bulk |
| 2N6672 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 350V 8A 3PIN TO-3 - Bulk |
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