參數(shù)資料
型號(hào): 2N6509
廠商: ON SEMICONDUCTOR
元件分類: 晶閘管
英文描述: Silicon Controlled Rectifiers
中文描述: 25 A, 800 V, SCR, TO-220AB
封裝: CASE 221A-07, 3 PIN
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 50K
代理商: 2N6509
Semiconductor Components Industries, LLC, 2001
April, 2001 – Rev. 4
1
Publication Order Number:
2N6504/D
2N6504 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supply crowbar circuits.
Glass Passivated Junctions with Center Gate Fire for Greater
Parameter Uniformity and Stability
Small, Rugged, Thermowatt Constructed for Low Thermal
Resistance, High Heat Dissipation and Durability
Blocking Voltage to 800 Volts
300 A Surge Current Capability
Device Marking: Logo, Device Type, e.g., 2N6504, Date Code
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
*Peak Repetitive Off–State Voltage (Note 1.)
(Gate Open, Sine Wave 50 to 60 Hz,
T
J
= 25 to 125
°
C)
2N6504
2N6505
2N6507
2N6508
2N6509
V
DRM,
V
RRM
50
100
400
600
800
Volts
On-State RMS Current
(180
°
Conduction Angles; T
C
= 85
°
C)
I
T(RMS)
25
A
Average On-State Current
(180
°
Conduction Angles; T
C
= 85
°
C)
I
T(AV)
16
A
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T
J
= 100
°
C)
I
TSM
250
A
Forward Peak Gate Power
(Pulse Width
1.0
μ
s, T
C
= 85
°
C)
P
GM
20
Watts
Forward Average Gate Power
(t = 8.3 ms, T
C
= 85
°
C)
P
G(AV)
0.5
Watts
Forward Peak Gate Current
(Pulse Width
1.0
μ
s, T
C
= 85
°
C)
I
GM
2.0
A
Operating Junction Temperature Range
T
J
–40 to
+125
°
C
Storage Temperature Range
T
stg
–40 to
+150
°
C
*Indicates JEDEC Registered Data
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
SCRs
25 AMPERES RMS
50 thru 800 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
2N6504
TO220AB
500/Box
2N6505
TO220AB
2N6507
TO220AB
http://onsemi.com
500/Box
500/Box
K
G
A
TO–220AB
CASE 221A
STYLE 3
1
2
3
4
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4
Anode
2N6508
TO220AB
500/Box
2N6509
TO220AB
500/Box
MARKING
DIAGRAM
YY WW
650x
x
YY
WW = Work Week
= 4, 5, 7, 8 or 9
= Year
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2N6509T 功能描述:SCR 800V 25A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
2N6509TG 功能描述:SCR 800V 25A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
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