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參數(shù)資料
| 型號： | 2N6515 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN High Voltage Transistor(NPN型高電壓晶體管) |
| 中文描述： | 500 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 53K |
| 代理商： | 2N6515 |
2N6515 NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
Collector-Emitter Voltage: V
CEO
= 250V
Collector Dissipation: P
C
(max)=625mW
ABSOLUTE MAXIMUM RATINGS (T
A
=25
°
C)
ELECTRICAL CHARACTERISTICS (T
A
=25
°
C)
* Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
Characteristic
Symbol
Rating
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
250
250
6
500
625
150
-55 ~ 150
V
V
V
mA
mW
°
C
°
C
Characteristic
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector-Emitter Breakdown Voltage
* Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Base Capacitance
Current Gain Bandwidth Product
Base Emitter On Voltage
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
C
OB
f
T
V
BE
(on)
I
C
=1mA, I
B
=0
I
C
=100
μ
A, I
E
=0
I
E
=10
μ
A, I
C
=0
V
CB
=150V, I
E
=0
V
BE
=5V, I
C
=0
I
C
=1mA, V
CE
=10V
I
C
=10mA, V
CE
=10V
I
C
=30mA, V
CE
=10V
I
C
=50mA, V
CE
=10V
I
C
=100mA, V
=10V
I
C
=10mA, I
B
=1mA
I
C
=20mA, I
B
=2mA
I
C
=30mA, I
B
=3mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=20mA, I
B
=2mA
I
C
=30mA, I
B
=3mA
V
CB
=20V, I
E
=0
f=1MHz
I
C
=10mA, V
CE
=20V
I
C
=100mA, V
CE
=10V
250
250
6
35
50
50
45
25
40
50
50
300
220
0.3
0.35
0.5
1
0.75
0.85
0.9
6
200
2
V
V
V
nA
nA
V
V
V
V
V
V
V
pF
MHz
V
TO-92
1.Emitter 2. Base 3. Collector
1999 Fairchild Semiconductor Corporation
Rev. B
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6515/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:High Voltage Transistors |
| 2N6515_11 | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:High Voltage Transistor 625mW |
| 2N6515BU | 功能描述:兩極晶體管 - BJT TO-92 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6515RLRM | 功能描述:兩極晶體管 - BJT 500mA 250V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6515RLRMG | 功能描述:兩極晶體管 - BJT 500mA 250V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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