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參數(shù)資料
| 型號： | 2N6519 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP High Voltage Transistor(PNP型高電壓晶體管) |
| 中文描述： | 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 32K |
| 代理商： | 2N6519 |
2N6519 PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (T
A
=25
°
C)
Refer to 2N6520 for graphs
ELECTRICAL CHARACTERISTICS (T
A
=25
°
C)
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
Characteristic
Symbol
Rating
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation
Derate above 25
°
C
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
-300
-300
-5
-500
-250
0.625
5
150
-55 ~ 150
V
V
V
mA
mA
W
mW/
°
C
°
C
°
C
Characteristic
Symbol
Test Conditions
Min
Max
Unit
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base Emitter On Voltage
* Current Gain Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Turn On Time
Turn Off Time
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
C
CB
C
EB
T
ON
T
OFF
I
C
= -100
μ
A, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -10
μ
A, I
C
=0
V
CB
= -200V, I
E
=0
V
EB
= -4V, I
C
=0
V
CE
= -10V, I
C
= -1mA
V
CE
= -10V, I
C
= -10mA
V
CE
= -10V, I
C
= -30mA
V
CE
= -10V, I
C
= -50mA
V
CE
= -10V, I
C
= -100mA
I
C
= -10mA, I
B
= -1mA
I
C
= -20mA, I
B
= -2mA
I
C
= -30mA, I
B
= -3mA
I
C
= -50mA, I
B
= -5mA
I
C
= -10mA, I
B
= -1mA
I
C
= -20mA, I
B
= -2mA
I
C
= -30mA, I
B
= -3mA
V
CE
= -10V, I
C
= -100mA
V
CE
= -20V, I
C
= -10mA
V
CB
= -20V, I
E
=0, f=1MHz
V
EB
= -0.5V, I
C
=0, f=1MHz
V
BE
(off)= -2V, V
= -100V
I
C
= -50mA, I
B
1= -10mA
V
CC
= -100V, I
C
= -50mA
I
B
1=I
B
2=10mA
-300
-300
-5
30
45
45
40
20
40
-50
-50
270
200
-0.30
-0.35
-0.50
-1
-0.75
-0.85
-0.90
-2
200
6
100
200
3.5
V
V
V
nA
nA
V
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
TO-92
1.Emitter 2. Base 3. Collector
1999 Fairchild Semiconductor Corporation
Rev. B
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6519BU | 功能描述:兩極晶體管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6519RLRA | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| 2N6519TA | 功能描述:兩極晶體管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6519TA_Q | 功能描述:兩極晶體管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N651A | 制造商: 功能描述: 制造商:Motorola Inc 功能描述: 制造商:undefined 功能描述: |
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