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參數(shù)資料
| 型號(hào)： | 2N6661 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓90V,N溝道增強(qiáng)型垂直DMOS場(chǎng)效應(yīng)管) |
| 中文描述： | N溝道增強(qiáng)型場(chǎng)效應(yīng)管垂直的DMOS（擊穿電壓90V的，?溝道增強(qiáng)型垂直的DMOS場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大小： | 21K |
| 代理商： | 2N6661 |
7-4
2N6660/2N6661
Thermal Characteristics
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
6.25W
θ
jc
°
C/W
20
θ
ja
°
C/W
125
I
DR
*
I
DRM
2N6660
1.1A
3A
1.1A
3.0A
2N6661
*
I
D
(continuous) is limited by max rated T
j
.
0.9A
3A
6.25W
20
125
0.9A
3.0A
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
2N6660
60
2N6661
90
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
0.8
2.0
V
V
GS
= V
DS
, I
D
=1mA
V
GS
= V
DS
, I
D
=1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating,
T
A
= 125
°
C
V
GS
= 10V, V
DS
= 10V
V
GS
= 5V, I
D
= 0.3A
V
GS
= 10V, I
D
= 1A
V
GS
= 10V, I
D
= 1A
V
DS
= 25V, I
D
= 0.5A
Change in V
GS(th)
with Temperature
Gate Body Leakage
-3.8
-5.5
mV/
°
C
100
nA
Zero Gate Voltage Drain Current
10
μ
A
500
I
D(ON)
R
DS(ON)
ON-State Drain Current
1.5
A
All
5.0
2N6660
3.0
2N6661
4.0
G
FS
C
ISS
C
OSS
C
RSS
t
(ON)
t
(OFF)
V
SD
t
rr
Forward Transconductance
170
m
Input Capacitance
50
Common Source Output Capacitance
40
pF
Reverse Transfer Capacitance
10
Turn-ON Time
10
Turn-OFF Time
10
Diode Forward Voltage Drop
1.2
V
V
GS
= 0V, I
SD
= 1A
V
GS
= 0V, I
SD
= 1A
Reverse Recovery Time
350
ns
Notes:
1: All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2: All A.C. parameters sample tested.
Drain-to-Source
Breakdown Voltage
V
V
GS
= 0V, I
D
= 10
μ
A
Static Drain-to-Source
ON-State Resistance
V
GS
= 0V, V
DS
= 24V
f = 1 MHz
ns
V
DD
= 25V,
I
D
= 1A, R
GEN
= 25
Switching Waveforms and Test Circuit
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
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|---|---|
| 2N6661_10 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 2N6661_11 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 90 V (D-S) MOSFET |
| 2N6661-2 | 功能描述:MOSFET 90V 0.86A 6.25W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N6661CSM4 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| 2N6661DCSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:DUAL N–CHANNEL ENHANCEMENT MODE |
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