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參數(shù)資料
| 型號： | 2N6405G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | Silicon Controlled Rectifiers SCRs 16 AMPERES RMS 50 thru 800 VOLTS |
| 中文描述： | 16 A, 800 V, SCR, TO-220AB |
| 封裝： | LEAD FREE, CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 87K |
| 代理商： | 2N6405G |
2N6400 Series
http://onsemi.com
2
MAXIMUM RATINGS
*
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
V
DRM,
V
RRM
Value
Unit
V
Peak Repetitive OffState Voltage (Note 1)
(T
J
=
40 to 125
°
C, Sine Wave 50 to 60 Hz; Gate Open)
2N6400
2N6401
2N6402
2N6403
2N6404
2N6405
50
100
200
400
600
800
16
10
160
145
20
0.5
2.0
On-State Current RMS (180
°
Conduction Angles; T
C
= 100
°
C)
Average On-State Current (180
°
Conduction Angles; T
C
= 100
°
C)
Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, T
J
= 90
°
C)
Circuit Fusing Considerations (t = 8.3 ms)
Forward Peak Gate Power (Pulse Width
≤
1.0 s, T
C
= 100
°
C)
Forward Average Gate Power (t = 8.3 ms, T
C
= 100
°
C)
Forward Peak Gate Current (Pulse Width
≤
1.0 s, T
C
= 100
°
C)
Operating Junction Temperature Range
Storage Temperature Range
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
I
T(RMS)
I
T(AV)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
T
J
T
stg
A
A
A
A
2
s
W
W
A
°
C
°
C
40 to +125
40 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
JC
T
L
Max
1.5
260
Unit
°
C/W
°
C
Thermal Resistance, JunctiontoCase
Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current
(V
AK
= Rated V
DRM
or V
RRM
, Gate Open)
T
J
= 25
°
C
T
J
= 125
°
C
I
DRM
,
I
RRM
10
2.0
A
mA
ON CHARACTERISTICS
*Peak Forward OnState Voltage
(I
TM
= 32 A Peak, Pulse Width
≤
1 ms, Duty Cycle
≤
2%)
*Gate Trigger Current (Continuous dc)
(V
D
= 12 Vdc, R
L
= 100 )
*Gate Trigger Voltage (Continuous dc)
(V
D
= 12 Vdc, R
L
= 100 )
V
TM
I
GT
1.7
30
60
V
T
C
= 25
°
C
T
C
= 40
°
C
9.0
mA
T
C
= 25
°
C
T
C
= 40
°
C
V
GT
0.7
18
1.5
2.5
40
V
Gate NonTrigger Voltage (V
D
= 12 Vdc, R
L
= 100 ), T
C
= +125
°
C
*Holding Current
(V
D
= 12 Vdc, Initiating Current = 200 mA, Gate Open)
V
GD
I
H
0.2
V
T
C
= 25
°
C
*T
C
= 40
°
C
60
mA
Turn-On Time (I
TM
= 16 A, I
GT
= 40 mAdc, V
D
= Rated V
DRM
)
Turn-Off Time (I
TM
= 16 A, I
R
= 16 A, V
D
= Rated V
DRM
)
t
gt
t
q
1.0
s
s
T
C
= 25
°
C
T
J
= +125
°
C
15
35
DYNAMIC CHARACTERISTICS
Critical RateofRise of Off-State Voltage (V
D
= Rated V
DRM
, Exponential Waveform)
T
J
= +125
°
C
*Indicates JEDEC Registered Data.
dv/dt
50
V/ s
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