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參數(shù)資料
| 型號： | 2N6439 |
| 英文描述： | POWER TRANSISTOR |
| 中文描述： | 功率晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 137K |
| 代理商： | 2N6439 |
ELECTRICAL CHARACTERISTICS* — continued
(T
C
= 25
°
C unless otherwise noted.)
Characteristic
Unit
Max
Typ
Min
Symbol
ON CHARACTERISTICS
DC Current Gain
(I
C
= 1.0 Adc, V
CE
= 5.0 Vdc)
h
FE
10
—
100
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
CB
= 28 Vdc, I
E
= 0, f = 1.0 MHz)
C
ob
—
67
75
pF
BROADBAND FUNCTIONAL TESTS
(Figure 6)
Common–Emitter Amplifier Power Gain
(V
CC
= 28 Vdc, P
out
= 60 W, f = 225–400 MHz)
G
PE
7.8
8.5
—
dB
Electrical Ruggedness
(P
out
= 60 W, V
CC
= 28 Vdc, f = 400 MHz, VSWR 30:1
all phase angles)
ψ
No Degradation in Output Power
—
NARROW BAND FUNCTIONAL TESTS
(Figure 1)
Common–Emitter Amplifier Power Gain
(V
CC
= 28 Vdc, P
out
= 60 W, f = 400 MHz)
G
PE
7.8
10
—
dB
Collector Efficiency
(V
CC
= 28 Vdc, P
out
= 60 W, f = 400 MHz)
η
55
—
—
%
* Indicates JEDEC Registered Data.
Figure 1. 400 MHz Test Amplifier (Narrow Band)
C1
C5
C9 — 1000 pF
C10 — 5.0
μ
F
R1 — 15
L1, L2 — 3/16
″
x 1
″
Copper Strap
L3 — 1.5
μ
H
L4 — 10
μ
H
L5 — 1 Turn #16 AWG, 5/16
″
I.D.
C4, C11 — 4.0–40 pF
C8 — 33 pF
('
%
)
)
2
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