參數(shù)資料
型號: 2N6439
英文描述: POWER TRANSISTOR
中文描述: 功率晶體管
文件頁數(shù): 4/6頁
文件大?。?/td> 137K
代理商: 2N6439
Figure 7. 225 to 400 MHz Broadband Test Circuit Schematic
Figure 8. Power Gain versus Frequency
Figure 9. Efficiency versus Frequency
BROADBAND DATA (Circuit, Figure 7)
C1 — 68 pF
C2, C4, C8, C10 — 27 pF
C3, C5, C11 — 10 pF
C6, C7 — 51 pF
C9 — 1.0–10 pF JOHANSON
C12 — 100 pF
C13, C15 — 680 pF
C14, C16 — 1.0
μ
F, 35 V Tantalum
C17 — 0.1
μ
F, ERIE Red Cap
RFC1 — Ferrite Bead Choke, Feroxcube VK200 19/4B
B — Ferroxcube 56-590-65/4B Ferrite Bead
T1, T2 — 25 Ohms (UT25) Miniature Coaxial Cable, 1 turn
R1 — 11
, 1.0 W
R2 — 20
, 1/4 W
L1 — 10 Turns, #22 AWG, 1/8
I.D.
L2 — 4 Turns, #16 AWG, 1/4
I.D.
L3 — 6 Turns, #24 AWG, 1/8
I.D.
L4, L5 — 1
x 0.25
Microstrip Line
Board Material 0.031
Thick Teflon-Fiberglass
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2N6439 60 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON
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