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| 型號： | 2N6427G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Darlington Transistors NPN Silicon |
| 中文描述： | 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-11, TO-226, 3 PIN |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 87K |
| 代理商： | 2N6427G |
2N6426, 2N6427
http://onsemi.com
6
PACKAGE DIMENSIONS
TO92 (TO226)
CASE 2911
ISSUE AM
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
V
SECTION XX
C
D
N
N
X X
SEATING
PLANE
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
MIN
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
0.115
0.135
MAX
0.205
0.210
0.165
0.021
0.055
0.105
0.020
0.105
0.100
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
12.70
6.35
2.04
2.93
3.43
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
2.66
2.54
MILLIMETERS
INCHES
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
B
K
G
SECTION XX
C
V
D
N
X X
SEATING
PLANE
DIM
A
B
C
D
G
J
K
N
P
R
V
MIN
4.45
4.32
3.18
0.40
2.40
0.39
12.70
2.04
1.50
2.93
3.43
MAX
5.20
5.33
4.19
0.54
2.80
0.50
2.66
4.00
MILLIMETERS
1
T
STRAIGHT LEAD
BULK PACK
BENT LEAD
TAPE & REEL
AMMO PACK
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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PDF描述 |
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| 2N6427RLRAG | Darlington Transistors NPN Silicon |
| 2N6429 | TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 200MA I(C) | TO-92 |
| 2N6439 | POWER TRANSISTOR |
| 2N6439 | 60 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON |
| 2N6477 | Shrink Tubing; Tubing Size Diameter:0.5"; Wall Thickness Recovered Nominal:0.055"; Inner Diameter Max Recovered:0.195"; Expanded Inner Diameter:0.500"; Material:Polyolefin |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6427RLRA | 功能描述:達(dá)林頓晶體管 500mA 50V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6427RLRAG | 功能描述:達(dá)林頓晶體管 500mA 50V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6428 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:NPN EPITAXIAL SILICON TRANSISTOR |
| 2N6428A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:NPN EPITAXIAL SILICON TRANSISTOR |
| 2N6428ABU | 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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