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參數(shù)資料
| 型號： | 2N6547 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Switching NPN Silicon Power Transistor(開關(guān)型硅NPN功率晶體管) |
| 中文描述： | 15 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | TO-3, 2 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 70K |
| 代理商： | 2N6547 |
2N6547
http://onsemi.com
5
MAXIMUM RATED SAFE OPERATING AREAS
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Forward Bias Safe Operating Area
BONDING WIRE LIMITED
THERMAL LIMIT (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
50
5.0
10
20
400
T
C
= 25
°
C
0.2
0.1
0.05
10
0.5
20
70
1.0
0.005
dc
5.0
100
7.0
2N6546
2N6547
CURVES APPLY BELOW RATED V
CEO
5.0 ms
1.0 ms
100
μ
s
I
0.01
30
50
300
200
0.02
2.0
10 ms
TURN OFF LOAD LINE
BOUNDARY FOR 2N6547.
FOR 2N6546, V
AND
V
CEX
ARE 100 VOLTS LESS.
20
Figure 8. Reverse Bias Safe Operating Area
100
500
V
CEX(sus)
8.0
16
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
12
0
0
400
V
CEO(sus)
V
CEX(sus)
8.0 V
I
4.0
300
200
V
BE(off)
T
C
5 V
100
°
C
100
80
60
20
00
40
80
120
160
200
Figure 9. Power Derating
T
, CASE TEMPERATURE (
°
C)
P
THERMAL DERATING
40
SECOND BREAKDOWN
DERATING
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
– V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 7 is based on T
C
= 25 C; T
J(pk)
is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when T
C
≥
25 C. Second breakdown limitations do
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 7 may be found at
any case temperature by using the appropriate curve on
Figure 9.
T
J(pk)
may be calculated from the data in Figure 10. At
high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
Figure 10. Thermal Response
t, TIME (ms)
1.0
0.010.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1.0 k
500
Z
θ
JC
(t) = r(t) R
θ
JC
R
θ
JC
= 1.0
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
Z
θ
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
r
(
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6547 | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-3 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-3 |
| 2N6547/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Switchmode Series NPN Silicon Power Transistors |
| 2N6548 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:NPN SILICON DARLINGTON TRANSISTORS |
| 2N6548N | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 2A I(C) | TO-202VAR |
| 2N6549 | 功能描述:達林頓晶體管 NPN 40V 2A RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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