參數(shù)資料
型號(hào)： 2N6509TG
廠商： ON SEMICONDUCTOR
元件分類： 晶閘管
英文描述： Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS
中文描述： 25 A, 800 V, SCR, TO-220AB
封裝： LEAD FREE, CASE 221A-07, 3 PIN
文件頁(yè)數(shù)： 2/7頁(yè)
文件大小： 72K
代理商： 2N6509TG
2N6504 Series
http://onsemi.com
2
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
*Peak Repetitive OffState Voltage (Note 1)
(Gate Open, Sine Wave 50 to 60 Hz, T
J
= 25 to 125
°
C)
2N6504
2N6505
2N6507
2N6508
2N6509
V
DRM,
V
RRM
50
100
400
600
800
V
On-State Current RMS (180
°
Conduction Angles; T
C
= 85
°
C)
I
T(RMS)
25
A
Average On-State Current (180
°
Conduction Angles; T
C
= 85
°
C)
I
T(AV)
16
A
Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, T
J
= 100
°
C)
I
TSM
250
A
Forward Peak Gate Power (Pulse Width
≤
1.0 s, T
C
= 85
°
C)
P
GM
20
W
Forward Average Gate Power (t = 8.3 ms, T
C
= 85
°
C)
P
G(AV)
0.5
W
Forward Peak Gate Current (Pulse Width
≤
1.0 s, T
C
= 85
°
C)
I
GM
2.0
A
Operating Junction Temperature Range
T
J
40 to +125
°
C
Storage Temperature Range
T
stg
40 to +150
°
C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
*Thermal Resistance, JunctiontoCase
R
JC
1.5
°
C/W
*Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds
T
L
260
°
C
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current
(V
AK
= Rated V
DRM
or V
RRM
, Gate Open)
T
J
= 25
°
C
T
J
= 125
°
C
I
DRM
,
I
RRM
10
2.0
A
mA
ON CHARACTERISTICS
*Forward OnState Voltage (Note 2)
(I
TM
= 50 A)
V
TM
1.8
V
*Gate Trigger Current (Continuous dc)
(V
AK
= 12 Vdc, R
L
= 100 )
T
C
= 25
°
C
T
C
= 40
°
C
I
GT
9.0
30
75
mA
*Gate Trigger Voltage (Continuous dc) (V
AK
= 12 Vdc, R
L
= 100 , T
C
= 40
°
C)
V
GT
1.0
1.5
V
Gate Non-Trigger Voltage (V
AK
= 12 Vdc, R
L
= 100 , T
J
= 125
°
C)
V
GD
0.2
V
*Holding Current
(V
AK
= 12 Vdc, Initiating Current = 200 mA, Gate Open) T
C
= 40
°
C
T
C
= 25
°
C
I
H
18
40
80
mA
*Turn-On Time (I
TM
= 25 A, I
GT
= 50 mAdc)
t
gt
1.5
2.0
s
Turn-Off Time (V
DRM
= rated voltage)
(I
TM
= 25 A, I
R
= 25 A)
(I
TM
= 25 A, I
R
= 25 A, T
J
= 125
°
C)
t
q
15
35
s
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage (Gate Open, Rated V
DRM
, Exponential Waveform)
*Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
dv/dt
50
V/ s
相關(guān)PDF資料
PDF描述
2N6504 Reverse Blocking Thyristor(25A（均方根值），50V硅控整流器反向截止晶閘管)
2N6505 Silicon Controlled Rectifiers
2N6507 Silicon Controlled Rectifiers
2N6508 Silicon Controlled Rectifiers
2N6509 Silicon Controlled Rectifiers
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