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參數(shù)資料
| 型號： | 2N6519 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | High Voltage PNP Transistor(300V高壓PNP晶體管) |
| 中文描述： | 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-226AA, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 98K |
| 代理商： | 2N6519 |
NPN 2N6515 2N6517 PNP 2N6519 2N6520
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
(Continued)
Collector Cutoff Current
(V
CB
= 150 Vdc, I
E
= 0)
(V
CB
= 200 Vdc, I
E
= 0)
(V
CB
= 250 Vdc, I
E
= 0)
2N6515
2N6519
2N6517, 2N6520
I
CBO
—
—
—
50
50
50
nAdc
Emitter Cutoff Current
(V
EB
= 5.0 Vdc, I
C
= 0)
(V
EB
= 4.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
(1)
2N6515, 2N6517
2N6519, 2N6520
I
EBO
—
—
50
50
nAdc
DC Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
2N6515
2N6519
2N6517, 2N6520
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
2N6515
2N6519
2N6517, 2N6520
(I
C
= 30 mAdc, V
CE
= 10 Vdc)
2N6515
2N6519
2N6517, 2N6520
(I
C
= 50 mAdc, V
CE
= 10 Vdc)
2N6515
2N6519
2N6517, 2N6520
(I
C
= 100 mAdc, V
CE
= 10 Vdc)
2N6515
2N6519
2N6517, 2N6520
h
FE
35
30
20
50
45
30
50
45
30
45
40
20
25
20
15
—
—
—
—
—
—
300
270
200
220
200
200
—
—
—
—
Collector–Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 20 mAdc, I
B
= 2.0 mAdc)
(I
C
= 30 mAdc, I
B
= 3.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
CE(sat)
—
—
—
—
0.30
0.35
0.50
1.0
Vdc
Base–Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 20 mAdc, I
B
= 2.0 mAdc)
(I
C
= 30 mAdc, I
B
= 3.0 mAdc)
V
BE(sat)
—
—
—
0.75
0.85
0.90
Vdc
Base–Emitter On Voltage
(I
C
= 100 mAdc, V
CE
= 10 Vdc)
V
BE(on)
—
2.0
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(1)
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 20 MHz)
f
T
40
200
MHz
Collector–Base Capacitance
(V
CB
= 20 Vdc, I
E
= 0, f = 1.0 MHz)
C
cb
—
6.0
pF
Emitter–Base Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
2N6515, 2N6517
2N6519, 2N6520
C
eb
—
—
80
100
pF
SWITCHING CHARACTERISTICS
Turn–On Time
(V
CC
= 100 Vdc, V
BE(off)
= 2.0 Vdc, I
C
= 50 mAdc, I
B1
= 10 mAdc)
t
on
—
200
μ
s
Turn–Off Time
(V
CC
= 100 Vdc, I
C
= 50 mAdc, I
B1
= I
B2
= 10 mAdc)
t
off
—
3.5
μ
s
1. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2.0%.
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| 2N6519BU | 功能描述:兩極晶體管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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| 2N651A | 制造商: 功能描述: 制造商:Motorola Inc 功能描述: 制造商:undefined 功能描述: |
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