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參數(shù)資料
| 型號(hào)： | 2N6488 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Silicon Plastic Power Transistor(15A，75W，80V（集電極-發(fā)射極），補(bǔ)償型，硅NPN功率晶體管) |
| 中文描述： | 15 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, CASE 221A-09, 3 PIN |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 136K |
| 代理商： | 2N6488 |
2N6487 2N6488 2N6490 2N6491
http://onsemi.com
4
Figure 2. Switching Time Test Circuit
1000
Figure 3. Turn
On Time
I
C
, COLLECTOR CURRENT (AMP)
t
500
50
20
0.2
20
T
C
= 25
°
C
V
CC
= 30 V
I
C
/I
B
= 10
10
1.0
5.0
t
r
0.5
2.0
10
200
100
t
d
@ V
BE(off)
5.0 V
NPN
PNP
+ 10 V
0
SCOPE
R
B
4 V
t
r
, t
f
10 ns
DUTY CYCLE = 1.0%
R
C
D
1
MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE I
MSD6100 USED BELOW I
B
100 mA
100 mA
B
25
μ
s
10 V
D
1
51
R
B
AND R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS.
FOR PNP, REVERSE ALL POLARITIES.
V
CC
+ 30 V
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.010.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1.0 k
500
Z
θ
JC
(t) = r(t) R
θ
JC
R
θ
JC
= 1.67
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
T
C
= P
(pk)
Z
θ
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
r
(
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 25
°
C
CURVES APPLY BELOW RATED V
CEO
20
Figure 5. Active
Region Safe Operating Area
2.0
10
20
80
T
J
= 150
°
C
0.2
5.0
0.5
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
10
40
1.0
0.1
dc
2.0
60
4.0
2N6487, 2N6490
2N6488, 2N6491
5.0 ms
1.0 ms
500
μ
s
100
μ
s
I
There are two limitations on the power handling ability of
a transistors average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150 C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
150 C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6488G | 功能描述:兩極晶體管 - BJT 15A 80V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6489 | 制造商:n/a 功能描述:2N6489 S3B2F 制造商:Harris Corporation 功能描述: |
| 2N6490 | 功能描述:兩極晶體管 - BJT PNP Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N649093 | 制造商:Harris Corporation 功能描述: |
| 2N6490G | 功能描述:兩極晶體管 - BJT 15A 60V 75W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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