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參數(shù)資料
| 型號： | 2N6507T |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS |
| 中文描述： | 25 A, 400 V, SCR, TO-220AB |
| 封裝： | CASE 221A-07, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 72K |
| 代理商： | 2N6507T |
2N6504 Series
http://onsemi.com
2
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
*Peak Repetitive OffState Voltage (Note 1)
(Gate Open, Sine Wave 50 to 60 Hz, T
J
= 25 to 125
°
C)
2N6504
2N6505
2N6507
2N6508
2N6509
V
DRM,
V
RRM
50
100
400
600
800
V
On-State Current RMS (180
°
Conduction Angles; T
C
= 85
°
C)
I
T(RMS)
25
A
Average On-State Current (180
°
Conduction Angles; T
C
= 85
°
C)
I
T(AV)
16
A
Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, T
J
= 100
°
C)
I
TSM
250
A
Forward Peak Gate Power (Pulse Width
≤
1.0 s, T
C
= 85
°
C)
P
GM
20
W
Forward Average Gate Power (t = 8.3 ms, T
C
= 85
°
C)
P
G(AV)
0.5
W
Forward Peak Gate Current (Pulse Width
≤
1.0 s, T
C
= 85
°
C)
I
GM
2.0
A
Operating Junction Temperature Range
T
J
40 to +125
°
C
Storage Temperature Range
T
stg
40 to +150
°
C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
*Thermal Resistance, JunctiontoCase
R
JC
1.5
°
C/W
*Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds
T
L
260
°
C
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current
(V
AK
= Rated V
DRM
or V
RRM
, Gate Open)
T
J
= 25
°
C
T
J
= 125
°
C
I
DRM
,
I
RRM
10
2.0
A
mA
ON CHARACTERISTICS
*Forward OnState Voltage (Note 2)
(I
TM
= 50 A)
V
TM
1.8
V
*Gate Trigger Current (Continuous dc)
(V
AK
= 12 Vdc, R
L
= 100 )
T
C
= 25
°
C
T
C
= 40
°
C
I
GT
9.0
30
75
mA
*Gate Trigger Voltage (Continuous dc) (V
AK
= 12 Vdc, R
L
= 100 , T
C
= 40
°
C)
V
GT
1.0
1.5
V
Gate Non-Trigger Voltage (V
AK
= 12 Vdc, R
L
= 100 , T
J
= 125
°
C)
V
GD
0.2
V
*Holding Current
(V
AK
= 12 Vdc, Initiating Current = 200 mA, Gate Open) T
C
= 40
°
C
T
C
= 25
°
C
I
H
18
40
80
mA
*Turn-On Time (I
TM
= 25 A, I
GT
= 50 mAdc)
t
gt
1.5
2.0
s
Turn-Off Time (V
DRM
= rated voltage)
(I
TM
= 25 A, I
R
= 25 A)
(I
TM
= 25 A, I
R
= 25 A, T
J
= 125
°
C)
t
q
15
35
s
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage (Gate Open, Rated V
DRM
, Exponential Waveform)
*Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
dv/dt
50
V/ s
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6507TG | Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS |
| 2N6508G | Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS |
| 2N6509G | Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS |
| 2N6509T | Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS |
| 2N6509TG | Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6507TG | 功能描述:SCR 400V 25A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| 2N6508 | 功能描述:SCR 600V 25A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| 2N6508G | 功能描述:SCR 600V 25A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| 2N6508T | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| 2n6508TG | 功能描述:SCR 25A 600V RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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