型號(hào) | 廠商 | 描述 |
irfu3711 2 3 4 5 6 7 8 9 10 |
International Rectifier | RES 475-OHM 1% 0.25W 100PPM THICK-FILM SMD-1206 5K/REEL-7IN-PA |
irfr3711 2 3 4 5 6 7 8 9 10 |
International Rectifier | Power MOSFET(Vdss=20V, Rds(on)max=6.5mohm, Id=110A) |
irfr3711tr 2 3 4 5 6 7 8 9 10 |
International Rectifier | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 110A I(D) | TO-252AA |
irfr3711trl 2 3 4 5 6 7 8 9 10 |
International Rectifier | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 110A I(D) | TO-252AA |
irfr3711trr 2 3 4 5 6 7 8 9 10 |
International Rectifier | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 110A I(D) | TO-252AA |
irfu9110 2 3 4 5 6 |
International Rectifier | RES 4.75K-OHM 1% 0.25W 100PPM THICK-FILM SMD-1206 5K/REEL-7IN-PA |
irfr9110trl 2 3 4 5 6 |
International Rectifier | 150 x 32 pixel format, LED Backlight available |
irfr9110 2 3 4 5 6 |
International Rectifier | Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-3.1A) |
irfu9120 2 3 4 5 6 |
International Rectifier | Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-5.6A) |
irfr9120 2 3 4 5 6 |
International Rectifier | Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-5.6A) |
irfv360 2 3 4 5 6 7 8 |
International Rectifier | REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR |
irfy044cm 2 3 4 5 6 |
International Rectifier | 60V 0.040Ω N-Channel HEXFET Power MOSFET(60V 0.040Ω N溝道 HEXFET 功率 MOS場(chǎng)效應(yīng)管) |
irfy140cm 2 3 4 5 6 |
International Rectifier | 100 Volt, 0.077Ω,N-Channel HEXFET Power MOSFET(100 V, 0.077Ω,N溝道 HEXFET 功率 MOS場(chǎng)效應(yīng)管) |
irfy340cm 2 3 4 5 6 |
International Rectifier | 400 Volt,8.7A, 0.55Ω HEXFET Power MOSFET(400 V,8.7A, 0.55Ω HEXFET 功率 MOS場(chǎng)效應(yīng)管) |
irfy430cm 2 3 4 5 6 |
International Rectifier | 500 Volt, 1.5Ω N-Channel HEXFET Power MOSFET(500 V, 1.5Ω N溝道 HEXFET功率 MOS場(chǎng)效應(yīng)管) |
irfy9240cm 2 3 4 5 6 |
International Rectifier | -200 Volt, 0.51Ω P-Channel HEXFET Power MOSFET(-200 V, 0.51Ω P溝道HEXFET 功率 MOS場(chǎng)效應(yīng)管) |
irfy9240 2 3 4 5 6 |
International Rectifier | POWER MOSFET P-CHANNEL(BVdss=-200V, Rds(on)=0.51ohm, Id=-9.4A) |
irfz14pbf 2 3 4 5 6 7 |
International Rectifier | HEXFET POWER MOSFET |
irfz14 2 3 4 5 6 |
International Rectifier | HEXFET Power MOSFET |
irfz24n 2 3 4 5 6 7 8 |
International Rectifier | N-Channel HEXFET Power MOSFET(N溝道 HEXFET 功率MOS場(chǎng)效應(yīng)管) |
irfz24vlpbf 2 3 4 5 6 7 8 9 10 |
International Rectifier | HEXFET Power MOSFET |
irfz24vspbf 2 3 4 5 6 7 8 9 10 |
International Rectifier | HEXFET Power MOSFET |
irfz24v 2 3 4 5 6 7 8 |
International Rectifier | Power MOSFET(Vdss=60V, Rds(on)=60mohm, Id=17A) |
irfz34e 2 3 4 5 6 7 8 |
International Rectifier | N-Channel HEXFET Power MOSFET(N溝道 HEXFET 功率MOS場(chǎng)效應(yīng)管) |
irfz34nlpbf 2 3 4 5 6 7 8 9 10 |
International Rectifier | HEXFET Power MOSFET |
irfz34nspbf 2 3 4 5 6 7 8 9 10 |
International Rectifier | HEXFET Power MOSFET |
irfz34nl 2 3 4 5 6 7 8 9 10 |
International Rectifier | 30V N-Channel PowerTrench MOSFET |
irfz34ns 2 3 4 5 6 7 8 9 10 |
International Rectifier | 30V N-Channel PowerTrench MOSFET |
irfz34n 2 3 4 5 6 7 8 |
International Rectifier | N-Channel HEXFET Power MOSFET(N溝道 HEXFET 功率MOS場(chǎng)效應(yīng)管) |
irfz34vl 2 3 4 5 6 7 8 9 10 |
International Rectifier | Advanced Process Technology |
irfz34vs 2 3 4 5 6 7 8 9 10 |
International Rectifier | Advanced Process Technology |
irfz34 2 3 4 5 6 7 8 9 10 |
International Rectifier | Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A) |
irfz34vlpbf 2 3 4 5 6 7 8 9 10 |
International Rectifier | HEXFET Power MOSFET |
irfz34vspbf 2 3 4 5 6 7 8 9 10 |
International Rectifier | HEXFET Power MOSFET |
irfz44epbf 2 3 4 5 6 7 8 |
International Rectifier | HEXFET㈢ Power MOSFET |
irfz44npbf 2 3 4 5 6 7 8 |
International Rectifier | HEXFET-R Power MOSFET |
irfz44vzlpbf 2 3 4 5 6 7 8 9 10 11 12 13 |
International Rectifier | HEXFET㈢ Power MOSFET ( VDSS = 60V , RDS(on) = 12mヘ , ID = 57A ) |
irfz44vzpbf 2 3 4 5 6 7 8 9 10 11 12 13 |
International Rectifier | HEXFET㈢ Power MOSFET ( VDSS = 60V , RDS(on) = 12mヘ , ID = 57A ) |
irfz44vzspbf 2 3 4 5 6 7 8 9 10 11 12 13 |
International Rectifier | HEXFET㈢ Power MOSFET ( VDSS = 60V , RDS(on) = 12mヘ , ID = 57A ) |
irfz48nlpbf 2 3 4 5 6 7 8 9 10 |
International Rectifier | HEXFET Power MOSFET |
irfz48nspbf 2 3 4 5 6 7 8 9 10 |
International Rectifier | HEXFET Power MOSFET |
irfz48pbf 2 3 4 5 6 7 |
International Rectifier | HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) = 0.018ヘ , ID = 50A ) |
irfz48rspbf 2 3 4 5 6 7 8 9 10 |
International Rectifier | HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) = 0.018ヘ , ID = 50A ) |
irfz48rlpbf 2 3 4 5 6 7 8 9 10 |
International Rectifier | HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) = 0.018ヘ , ID = 50A ) |
irfz48zlpbf 2 3 4 5 6 7 8 9 10 11 12 |
International Rectifier | AUTOMOTIVE MOSFET |
irfz48zpbf 2 3 4 5 6 7 8 9 10 11 12 |
International Rectifier | AUTOMOTIVE MOSFET |
irfz48zspbf 2 3 4 5 6 7 8 9 10 11 12 |
International Rectifier | AUTOMOTIVE MOSFET |
irg4bc10kdpbf 2 3 4 5 6 7 8 9 10 |
International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
irg4bc10sd-l 2 3 4 5 6 7 8 9 10 11 12 |
International Rectifier | 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
irg4bc10kd 2 3 4 5 6 7 8 9 10 11 12 |
International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A) |