參數(shù)資料
型號： IRFZ34NS
廠商： International Rectifier
元件分類： MOSFETs
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 30V的N溝道的PowerTrench MOSFET的
文件頁數(shù)： 2/10頁
文件大小： 161K
代理商： IRFZ34NS
IRFZ34NS/L
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55
–––
––– 0.052 –––
–––
––– 0.040
2.0
–––
6.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.0
–––
49
–––
31
–––
40
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 16A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 16A
V
DS
= 55V, V
GS
= 0V
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 16A
V
DS
= 44V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 28V
I
D
= 16A
R
G
= 18
R
D
= 1.8
,
See Fig. 10
Between lead,
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V/°C
V
S
4.0
–––
25
250
100
-100
34
6.8
14
–––
–––
–––
–––
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
700
240
100
–––
–––
–––
pF
I
DSS
Drain-to-Source Leakage Current
I
GSS
ns
μA
nA
nH
L
S
Internal Source Inductance
–––
7.5
–––
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
16 A, di/dt
≤
420A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 16A, V
GS
= 0V
T
J
= 25°C, I
F
= 16A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
I
SM
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
57
130
1.6
86
200
V
ns
nC
Source-Drain Ratings and Characteristics
–––
–––
100
–––
–––
29
A
S
D
G
V
DD
= 25V, starting T
J
= 25°C, L = 610μH
R
G
= 25
, I
AS
= 16A. (See Figure 12)
Pulse width
≤
300μs; duty cycle
≤
2%.
Uses IRFZ34N data and test conditions
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