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參數(shù)資料
| 型號(hào)： | IRFZ34NS |
| 廠商： | International Rectifier |
| 元件分類： | MOSFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大小： | 161K |
| 代理商： | IRFZ34NS |
IRFZ34NS/L
HEXFET
Power MOSFET
PD - 9.1311A
l
Advanced Process Technology
l
Surface Mount (IRFZ34NS)
l
Low-profile through-hole (IRFZ34NL)
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ34NL) is available for low-
profile applications.
Description
V
DSS
= 55V
R
DS(on)
= 0.040
I
D
= 29A
D2
TO-262
S
D
G
8/25/97
Thermal Resistance
Parameter
Typ.
––––
––––
Max.
2.2
40
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount) **
°C/W
Parameter
Max.
29
20
100
3.8
68
0.45
± 20
130
16
5.6
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFZ34N | N-Channel HEXFET Power MOSFET(N溝道 HEXFET 功率MOS場(chǎng)效應(yīng)管) |
| IRFZ34VL | Advanced Process Technology |
| IRFZ34VS | Advanced Process Technology |
| IRFZ34 | Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A) |
| IRFZ34VLPbF | HEXFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFZ34NSPBF | 功能描述:MOSFET 60V 1 N-CH HEXFET 40mOhms 22.7nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFZ34NSTRL | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 29A 3-Pin(2+Tab) D2PAK T/R |
| IRFZ34NSTRLPBF | 功能描述:MOSFET MOSFT 55V 29A 40mOhm 22.7nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFZ34NSTRR | 功能描述:MOSFET N-CH 55V 29A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRFZ34NSTRRPBF | 功能描述:MOSFET 60V 1 N-CH HEXFET 40mOhms 22.7nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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