- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377514 > IRFY9240CM (International Rectifier) -200 Volt, 0.51Ω P-Channel HEXFET Power MOSFET(-200 V, 0.51Ω P溝道HEXFET 功率 MOS場效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號： | IRFY9240CM |
| 廠商： | International Rectifier |
| 英文描述： | -200 Volt, 0.51Ω P-Channel HEXFET Power MOSFET(-200 V, 0.51Ω P溝道HEXFET 功率 MOS場效應(yīng)管) |
| 中文描述： | -200，0.51ΩP伏安通道HEXFET功率MOSFET（-200五，0.51ΩP溝道的HEXFET功率馬鞍山場效應(yīng)管） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 137K |
| 代理商： | IRFY9240CM |
Product Summary
Part Number
BV
DSS
R
DS(on)
I
D
IRFY9240CM
-200V
0.51
-9.4A
Provisional Data Sheet No. PD 9.1295A
HEXFET
POWER MOSFET
International Rectifier’s HEXFET technology is the key to
its advanced line of power MOSFET transistors. The effi-
cient geometry design achieves very low on-state resis-
tance combined with high transconductance.
HEXFET power MOSFETs also feature all of the well-
established advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and electri-
cal parameter temperature stability. They are well-suited
for applications such as switching power supplies, motor
controls, inverters, choppers, audio amplifiers, high en-
ergy pulse circuits, and virtually any application where
high reliability is required.
The HEXFET power MOSFET’s totally isolated package
eliminates the need for additional isolating material between
the device and the heatsink. This improves thermal effi-
ciency and reduces drain capacitance.
IRFY9240CM
Features
n
Hermetically Sealed
n
Electrically Isolated
n
Simple Drive Requirements
n
Ease of Paralleling
P-CHANNEL
-200 Volt, 0.51
HEXFET
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalance Energy
Avalance Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
IRFY9240CM
-9.4
-6.0
-36
100
0.8
±20
700
-9.4
10
-5.5
-55 to 150
Units
ID @ VGS= -10V, TC = 25°C
ID @ VGS= -10V, TC = 100°C
IDM
PD @ TC = 25°C
A
W
W/K
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
Tstg
°C
300 (0.063 in (1.6mm) from case for 10 sec)
4.3(typical)
g
* I
D
current limited by pin diameter
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFY9240 | POWER MOSFET P-CHANNEL(BVdss=-200V, Rds(on)=0.51ohm, Id=-9.4A) |
| IRFZ14PBF | HEXFET POWER MOSFET |
| IRFZ14 | HEXFET Power MOSFET |
| IRFZ24N | N-Channel HEXFET Power MOSFET(N溝道 HEXFET 功率MOS場效應(yīng)管) |
| IRFZ24VLPbF | HEXFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFY9240CMSCV | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 200V 9.4A 3PIN TO-257 - Bulk |
| IRFY9240CMSCX | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 200V 9.4A 3PIN TO-257AA - Bulk |
| IRFY9240CSCV | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 200V 9.4A 3PIN TO-257 - Bulk |
| IRFY9240CSCX | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 200V 9.4A 3PIN TO-257 - Bulk |
| IRFY9240M | 制造商:International Rectifier 功能描述:HEXFET, HI-REL - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。