參數(shù)資料
型號： IRFZ34VSPbF
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁數(shù)： 2/10頁
文件大?。?/td> 128K
代理商： IRFZ34VSPBF
IRFZ34VS/IRFZ34VL
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 30A, V
GS
= 0V
T
J
= 25
°
C, I
F
= 30A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
70
99
1.6
110
150
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
30
120
A
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25
°
C, L = 180μH
R
G
= 25
, I
AS
= 30A. (See Figure 12)
I
SD
≤
30A, di/dt
≤
250A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175
°
C
Notes:
Pulse width
≤
400μs; duty cycle
≤
2%.
Uses IRFZ34V data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
Parameter
Min. Typ. Max. Units
60
–––
–––
0.062
–––
–––
–––
2.0
–––
15
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
10
–––
65
–––
31
–––
40
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25
°
C, I
D
= 1mA
V
GS
= 10V, I
D
= 18A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 18A
V
DS
= 60V, V
GS
= 0V
V
DS
= 48V, V
GS
= 0V, T
J
= 150
°
C
V
GS
= 20V
V
GS
= -20V
I
D
= 30A
V
DS
= 48V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 30V
I
D
= 30A
R
G
= 12
V
GS
= 10V, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V/
°
C
m
V
S
28
4.0
–––
25
250
100
-100
49
12
18
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
E
AS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
–––
–––
–––
–––
1120
–––
250
59
260
–––
–––
81
pF
mJ
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFZ35 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 25A I(D) | TO-220AB
IRFZ40 功能描述:MOSFET N-Chan 50V 50 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFZ40FI 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
IRFZ40PBF 功能描述:MOSFET N-Chan 50V 50 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFZ42 制造商:STMicroelectronics 功能描述:
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