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參數(shù)資料
| 型號： | IRFY140CM |
| 廠商： | International Rectifier |
| 英文描述： | 100 Volt, 0.077Ω,N-Channel HEXFET Power MOSFET(100 V, 0.077Ω,N溝道 HEXFET 功率 MOS場效應(yīng)管) |
| 中文描述： | 100伏，0.077Ω，N溝道HEXFET功率MOSFET（100伏，0.077Ω，?溝道的HEXFET功率馬鞍山場效應(yīng)管） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 146K |
| 代理商： | IRFY140CM |
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min.
100
—
Typ. Max. Units
—
—
0.1
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
0.077
VGS = 10V, ID = 16A
VGS(th)
gfs
IDSS
2.0
9.1
—
—
—
—
—
—
4.0
—
25
250
V
VDS = VGS, ID = 250μA
VDS
≥
15V, IDS = 16A
V
DS
= 0.8 x max. rating,V
GS
= 0V
VDS = 0.8 x max. rating
VGS = 0V, TJ = 25°C
VGS = 20V
VGS = -20V
VGS = 10V, ID = 16A
VDS = Max. Rating x 0.5
see figures 6 and 13
VDD = 50V, ID =16A, RG = 9.1
VGS = 10V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
30
2.4
12
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.7
100
-100
59
12
30.7
21
145
64
105
—
see figure 10
LS
Internal Source Inductance
—
8.7
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1660
550
120
—
—
—
VGS = 0v, VDS = 25V
f = 1.0MHz.
pF
Thermal Resistance
Parameter
RthJC Junction-to-Case
RthJA Junction-to-Ambient
RthCSCase-to-Sink
Min. Typ. Max. Units
—
—
—
—
—
0.21
Test Conditions
1.25
80
—
K/W
Typical socket mount
Mounting surface flat, smooth
μA
nC
nH
ns
Measured from the drain
lead, 6mm (0.25 in.) from
package to center of die.
Measured from the
source lead, 6mm (0.25
in.) from package to
source bonding pad.
Modified MOSFET symbol
showing the internal
inductances.
nA
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min. Typ. Max.
Units
—
—
—
—
Test Conditions
16
100
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
—
—
—
—
—
—
1.5
400
2.4
V
ns
μC
T
j
= 25°C, IS = 16A, VGS = 0V
Tj = 25°C, IF = 16A, di/dt
≤
100 A/
μ
s
VDD
≤
50 V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
IRFY140CM Device
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
A
see figure 5
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