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參數(shù)資料
| 型號： | IRFY430CM |
| 廠商： | International Rectifier |
| 英文描述： | 500 Volt, 1.5Ω N-Channel HEXFET Power MOSFET(500 V, 1.5Ω N溝道 HEXFET功率 MOS場效應(yīng)管) |
| 中文描述： | 500伏，1.5ΩN溝道HEXFET功率MOSFET（500伏特，1.5Ω?溝道的HEXFET功率馬鞍山場效應(yīng)管） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 141K |
| 代理商： | IRFY430CM |
Product Summary
Part Number
BV
DSS
R
DS(on)
I
D
IRFY430CM
500V
1.5
4.5A
Provisional Data Sheet No. PD 9.1291B
HEXFET
POWER MOSFET
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors. The effi-
cient geometry design achieves very low on-state re-
sistance combined with high transconductance.
HEXFET transistors also feature all of the well-estab-
lished advantages of MOSFETs, such as voltage con-
trol, very fast switching, ease of paralleling and electri-
cal parameter temperature stability. They are well-suited
for applications such as switching power supplies, mo-
tor controls, inverters, choppers, audio amplifiers, high
energy pulse circuits, and virtually any application where
high reliability is required.
The HEXFET transistor’s totally isolated package elimi-
nates the need for additional isolating material between
the device and the heatsink. This improves thermal effi-
ciency and reduces drain capacitance.
Features
n
Hermetically Sealed
n
Electrically Isolated
n
Simple Drive Requirements
n
Ease of Paralleling
n
Ceramic Eyelets
N-CHANNEL
500 Volt, 1.5
HEXFET
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalance Energy
Avalance Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
IRFY430CM
4.5
2.8
18
75
0.6
±20
280
4.5
7.5
3.5
-55 to 150
Units
ID @ VGS=10V, TC = 25°C
ID @ VGS=10V, TC = 100°C
IDM
PD @ TC = 25°C
A
W
W/K
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
Tstg
°C
300 (0.063 in (1.6mm) from
case for 10 sec)
4.3 (typical)
Weight
g
°C
IRFY430CM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| IRFY430CMSCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 500V 4.5A 3PIN TO-257 - Bulk |
| IRFY430CMSCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 500V 4.5A 3PIN TO-257 - Bulk |
| IRFY430CSCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 500V 4.5A 3PIN TO-257 - Bulk |
| IRFY430CSCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 500V 4.5A 3PIN TO-257 - Bulk |
| IRFY430M | 制造商:International Rectifier 功能描述:HEXFET, HI-REL - Bulk |
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