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參數(shù)資料
| 型號(hào)： | IRFY430CM |
| 廠商： | International Rectifier |
| 英文描述： | 500 Volt, 1.5Ω N-Channel HEXFET Power MOSFET(500 V, 1.5Ω N溝道 HEXFET功率 MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 500伏，1.5ΩN溝道HEXFET功率MOSFET（500伏特，1.5Ω?溝道的HEXFET功率馬鞍山場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 141K |
| 代理商： | IRFY430CM |
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min.
500
—
Typ. Max. Units
—
—
0.78
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
2.0
1.5
—
—
—
—
—
—
—
—
1.5
1.8
4.0
—
25
250
VGS = 10V, ID = 2.8A
VGS = 10V, ID = 4.5A
VDS = VGS, ID = 250μA
VDS
≥
15V, IDS = 2.8A
V
DS
= 0.8 x max. rating,V
GS
= 0V
VDS = 0.8 x max. rating
VGS = 0V, TJ = 25°C
VGS = 20V
VGS = -20V
VGS = 10V, ID = 4.5A
VDS = Max. Rating x 0.5
see figures 5 and 13
VDD = 250V, ID = 4.5A,
RG = 7.5, VGS = 10V
V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
19.8
2.2
5.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.7
100
-100
29.5
4.6
19.7
35
30
55
30
—
see figure 10
LS
Internal Source Inductance
—
8.7
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
6.0
135
65
—
—
—
VGS = 0v, VDS = 25V
f = 1.0MHz.
pF
Thermal Resistance
Parameter
RthJCJunction-to-Case
RthJA Junction-to-Ambient
RthCSCase-to-Sink
Min. Typ. Max. Units
—
—
—
—
—
0.21
Test Conditions
1.67
80
—
K/W
Typical socket mount
Mounting surface flat, smooth
μA
nC
nH
ns
Measured from the drain
lead, 6mm (0.25 in.) from
package to center of die.
Measured from the
source lead, 6mm (0.25
in.) from package to
source bonding pad.
Modified MOSFET symbol
showing the internal
inductances.
nA
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min. Typ. Max.
Units
—
—
—
—
Test Conditions
4.5
18
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
—
—
—
—
—
—
1.4
900
7.0
V
ns
μC
T
j
= 25°C, IS = 4.5A, VGS = 0V
Tj = 25°C, IF = 4.5A, di/dt
≤
100 A/
μ
s
VDD
≤
50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
IRFY430CM Device
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
A
see figure 5
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