參數(shù)資料
型號(hào): IRFY140CM
廠商: International Rectifier
英文描述: 100 Volt, 0.077Ω,N-Channel HEXFET Power MOSFET(100 V, 0.077Ω,N溝道 HEXFET 功率 MOS場(chǎng)效應(yīng)管)
中文描述: 100伏,0.077Ω,N溝道HEXFET功率MOSFET(100伏,0.077Ω,?溝道的HEXFET功率馬鞍山場(chǎng)效應(yīng)管)
文件頁數(shù): 5/6頁
文件大?。?/td> 146K
代理商: IRFY140CM
Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
Fig. 12c — Max. Avalanche Energy vs. Current
tp
V
(BR)DSS
I
AS
Fig. 12a — Unclamped Inductive Test Circuit
Fig. 12b — Unclamped Inductive Waveforms
RG
IAS
0.01
tp
D.U.T
L
VDS
+
-VDD
DRIVER
A
Fig. 13a — Gate Charge Test Circuit
IRFY140CM Device
0.01
0.00001
0.1
1
10
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
t
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
A
T
P
t
2
1
t
DM
Notes:
1. Duty factor D = t1
2
2. Peak TJ
DM
thJC
C
0
50
100
150
200
250
25
50
75
100
125
150
175
E
A
A
Starting T , Junction Temperature (°C)
V = 25V
I = 28A
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