- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377514 > IRFZ24VSPBF (International Rectifier) HEXFET Power MOSFET PDF資料下載
參數(shù)資料
| 型號： | IRFZ24VSPBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 278K |
| 代理商： | IRFZ24VSPBF |
IRFZ24VSPbF
IRFZ24VLPbF
HEXFET
Power MOSFET
V
DSS
= 60V
R
DS(on)
= 60m
I
D
= 17A
S
D
G
Advanced HEXFET
Power MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the
lowest possible on-resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRFZ24VL) is available for low-profile applications.
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Power Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Optimized for SMPS Applications
Lead-Free
Description
Max.
17
12
68
44
0.29
± 20
17
4.4
4.2
Units
A
W
W/°C
V
A
mJ
V/ns
-55 to + 175
300 (1.6mm from case )
°C
D
2
Pak
IRFZ24VS
TO-262
IRFZ24VL
www.irf.com
1
Parameter
Typ.
–––
–––
Max.
3.4
40
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB Mounted)**
Thermal Resistance
°C/W
PD - 95524
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFZ24V | Power MOSFET(Vdss=60V, Rds(on)=60mohm, Id=17A) |
| IRFZ34E | N-Channel HEXFET Power MOSFET(N溝道 HEXFET 功率MOS場效應(yīng)管) |
| IRFZ34NLPbF | HEXFET Power MOSFET |
| IRFZ34NSPBF | HEXFET Power MOSFET |
| IRFZ34NL | 30V N-Channel PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFZ25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 14A I(D) | TO-220AB |
| IRFZ30 | 功能描述:MOSFET N-Chan 50V 30 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFZ30PBF | 功能描述:MOSFET N-Chan 50V 30 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFZ32 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 25A I(D) | TO-220AB |
| IRFZ34 | 功能描述:MOSFET N-Chan 60V 30 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。