參數(shù)資料
型號(hào)： IRFY9240
廠商： International Rectifier
英文描述： POWER MOSFET P-CHANNEL(BVdss=-200V, Rds(on)=0.51ohm, Id=-9.4A)
中文描述： 功率MOSFET P溝道（BVdss \u003d-為200V，的Rds（on）\u003d 0.51ohm，身份證\u003d-輸出高達(dá)9.4A）
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 270K
代理商： IRFY9240
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
-200
—
Typ
—
-0.20
Max Units
—
—
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
BVDSS
V
V/°C
—
—
-2.0
4.0
—
—
—
—
—
—
—
—
0.51
0.52
-4.0
—
-25
-250
VGS = -10V, ID = -6.0A
VGS = -10V, ID = -9.4A
VDS = VGS, ID = -250
μ
A
S (
) VDS
≥
-15V, IDS = -6.0A
V
DS
= 0.8 x max. rating,V
GS
= 0V
VDS = 0.8 x max. rating
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS = -10V, ID = -9.4A
VDS = Max. Rating x 0.5
see figures 6 and 13
VDD = -100V, ID = -9.4A
RG = 9.1
,
VGS = -10V
ns
V
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
28
3.0
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.7
-100
100
60
15
38
35
85
85
65
—
see figure 10
LS
Internal Source Inductance
—
8.7
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1200
570
81
—
—
—
VGS = 0v, VDS = -25V
f = 1.0MHz.
see figure 5
pF
Thermal Resistance
Parameter
RthJCJunction-to-Case
RthJAJunction-to-Ambient
RthCSCase-to-Sink
Min Typ
—
—
—
Max Units
1.25
80
K/W
—
Test Conditions
—
—
0.21
Typical socket mount
Mounting surface flat, smooth
μA
nC
nH
Measured from the drain
lead, 6mm (0.25 in.) from
package to center of die.
Measured from the
source lead, 6mm (0.25
in.) from package to
source bonding pad.
Modified MOSFET symbol
showing the internal
inductances.
nA
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max
Units
Test Conditions
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
—
—
—
—
-9.4
-36
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
—
—
—
—
—
—
-4.6
440
7.2
V
ns
μC
T
j
= 25°C, IS = -9.4A, VGS = 0V
Tj = 25°C, IF = -9.4A, di/dt
≤
-100 A/μs
VDD
≤
-50 V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
IRFY9240CM Device
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
A
Next Data Sheet
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