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參數(shù)資料
| 型號： | IRFY044CM |
| 廠商： | International Rectifier |
| 英文描述： | 60V 0.040Ω N-Channel HEXFET Power MOSFET(60V 0.040Ω N溝道 HEXFET 功率 MOS場效應(yīng)管) |
| 中文描述： | 60V的0.040ΩN溝道HEXFET功率MOSFET（60V的0.040Ω?溝道的HEXFET功率馬鞍山場效應(yīng)管） |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 142K |
| 代理商： | IRFY044CM |
Fig. 13b — Basic Gate Charge Waveform
Case Outline and Dimensions
NOTES:
1. Dimensioning and tolerancing per ANSI Y14.5M-1982
2. Controlling dimension: Inch
3. Dimensions are shown in millimeters (Inches)
4. Outline conforms to JEDEC outline TO-257AA
Pin 1 - Drain
Pin 2 - Source
Pin 3 - Gate
12
3
TO-257AA
NON-STANDARD PIN CONFIGURATION
Pin 1 - Gate
Pin 2 - Drain
Pin 3 - Source
Order Part Type IRFY044C
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted,
machined or have other operations performed on them which
will produce beryllia or beryllium dust. Furthermore, beryllium
oxide packages shall not be placed in acids that will produce
fumes containing beryllium.
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44(0) 1883 732020
IR CANADA:
7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST:
K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:
315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
IRFY044CM Device
Repetitive Rating; Pulse width limited by maximum junc-
tion
temperature (see figure 11).
@ VDD = 25V, Starting TJ = 25°C,
EAS = [0.5 * L * ( ) * [BVDSS/(BVDSS-VDD)]
Peak IL = 16A, VGS = 10V 25
≤
RG
≤
200
ISD
≤
16A, di/dt
≤
100A/μs, VDD
≤
BVDSS, TJ
≤
150°C
Pulse width
≤
300 μs; Duty Cycle
≤
2%
K/W = °C/W
W/K = W/°C
Notes:
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFY140CM | 100 Volt, 0.077Ω,N-Channel HEXFET Power MOSFET(100 V, 0.077Ω,N溝道 HEXFET 功率 MOS場效應(yīng)管) |
| IRFY340CM | 400 Volt,8.7A, 0.55Ω HEXFET Power MOSFET(400 V,8.7A, 0.55Ω HEXFET 功率 MOS場效應(yīng)管) |
| IRFY430CM | 500 Volt, 1.5Ω N-Channel HEXFET Power MOSFET(500 V, 1.5Ω N溝道 HEXFET功率 MOS場效應(yīng)管) |
| IRFY9240CM | -200 Volt, 0.51Ω P-Channel HEXFET Power MOSFET(-200 V, 0.51Ω P溝道HEXFET 功率 MOS場效應(yīng)管) |
| IRFY9240 | POWER MOSFET P-CHANNEL(BVdss=-200V, Rds(on)=0.51ohm, Id=-9.4A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFY044CMSCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 16A 3PIN TO-257 - Bulk |
| IRFY044CMSCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 16A 3PIN TO-257 - Bulk |
| IRFY044CSCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 16A 3PIN TO-257 - Bulk |
| IRFY044CSCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 16A 3PIN TO-257 - Bulk |
| IRFY044M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel |
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